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BUT11F

Onsemi

BUT11F by Onsemi

BUT11F by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 1.5V, IC of 5A, and Pmax of 40W. Ideal for use in power electronics due to its high voltage rating and fast switching times.

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Anansix

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Digiode

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Halfin

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Fibra_Brandt Electronic GMBH

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Vyrian

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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One Stop Electronics

USA . 589 parts In-Stock

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Kepictronics

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UNI Independent Distributors

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Kulean Microsystems

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Glotronic Ltd.

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Corphita

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SupplyDigital Components

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TANS Electronics

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Native Components

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UHIMA Technologies

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Northwest PG Solutions

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Supply Digital

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Corohmni

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Problanco Electronics

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Overview

Unleash the power of innovation with the BUT11F by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliable products. The BUT11F falls under the Power Bipolar Junction Transistors category, perfect for switching applications. With a maximum VCEsat of 1.5V and a maximum collector-emitter voltage of 400V, this transistor offers exceptional performance and efficiency. Trust the BUT11F to provide optimal power dissipation of 40W and a fast fall time of 800ns. Elevate your projects with the BUT11F and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable package for the transistor, making it easy to handle and install.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and control applications due to their high input impedance and fast switching speeds.

Configuration: SINGLE

Simplifies the circuit design by requiring only one transistor for switching purposes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation in such scenarios.

Maximum VCEsat: 1.5 V

Low VCEsat voltage minimizes power loss and improves efficiency in the switching process.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various circuit layouts and designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure mechanical connections and easy soldering during installation.

Maximum Fall Time (tf): 800 ns

Fast fall time ensures quick response and switching speed in applications requiring rapid on/off transitions.

No. of Terminals: 3

Simple three-terminal configuration for easy connection to external circuitry.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows for handling of significant power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting options for stability in different installations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating enhances the robustness and versatility of the transistor in different circuit configurations.

Transistor Element Material: SILICON

Silicon-based transistor element offers high performance, reliability, and efficiency in power switching applications.

Maximum Turn On Time (ton): 1000 ns

Fast turn on time ensures quick activation and response time for effective switching operations.

Maximum Collector Current (IC): 5 A

High collector current rating allows for handling of substantial current loads without performance degradation.

Maximum Turn Off Time (toff): 4800 ns

Sufficient turn-off time for complete switching off of the transistor, avoiding any lingering current in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection of the transistor in the circuit.

Case Connection: ISOLATED

Isolated case connection enhances safety and minimizes risks of short-circuits or interference in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11F attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Maximum Fall Time (tf):

800 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4800 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

1.5 V

Trade Compliance

BUT11F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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