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BUT11APX

NXP Semiconductors

BUT11APX by NXP Semiconductors

NXP Semiconductors' BUT11APX is a NPN BJT transistor with 450V VCE, 5A IC, and 32W power dissipation. Ideal for switching applications due to its single configuration and hFE of 14, it comes in a plastic/epoxy package with through-hole terminals. Operating up to 150°C, it's commonly used in flange mount setups requiring isolated case connections.

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9

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Digiode

USA . 4,912 parts In-Stock

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VNN

France . 4,287 parts In-Stock

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Vyrian

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Q Components

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Anansix

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ComSIT Distribution GmbH

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Nova Conductors

Japan . 15 parts In-Stock

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LittleDiode

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Holdelec - ElecDif-Pro

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Component Stockers USA

USA . 2,473 parts In-Stock

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$0.130

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Corohmni

South Africa . 171 parts In-Stock

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Ampacity Inc.

Singapore . 1,500 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,217 parts In-Stock

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AZTECH Wire

Italy . 619 parts In-Stock

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One Stop Electronics

USA . 504 parts In-Stock

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Semicontronic

India . 146 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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Bastille Electronics

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Cyclops Electronics Ltd (Excess)

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Overview

Experience unparalleled performance and reliability with the BUT11APX power transistor from NXP Semiconductors. As a leading manufacturer in the industry, NXP guarantees top-notch quality and cutting-edge technology in every product they offer. The BUT11APX is perfect for a wide range of applications including switching, thanks to its high power dissipation and temperature resistance. With a maximum collector-emitter voltage of 450V and a maximum collector current of 5A, this transistor provides exceptional value and benefits to customers looking for a durable and efficient solution for their electronic projects. Choose the BUT11APX for all your power transistor needs and experience the difference that NXP Semiconductors can make in your work.

Feature Benefit Bullets

Dielectric Material: CERAMIC

Ceramic material provides high stability and reliability in various temperature and voltage conditions, making this capacitor suitable for a wide range of applications.

Package Shape: RECTANGULAR PACKAGE

Rectangular package shape allows for easy mounting and space-saving design, making it suitable for compact electronic devices.

Multi-layer: Yes

Multi-layer construction enhances capacitance density and improves performance, making this capacitor suitable for applications where space is limited.

Packing Method: TR, Paper, 7 Inch

TR packaging method ensures safe transportation and storage, while paper packaging is environmentally friendly.

No. of Terminals: 2

Having two terminals simplifies the connection process and allows for easy integration into circuit designs.

Package Style (Meter): SMT

Surface mount technology (SMT) package style allows for easy and efficient mounting on PCBs, making production processes faster and more cost-effective.

Terminal Shape: WRAPAROUND

Wraparound terminals provide secure connections and allow for efficient soldering, ensuring reliable performance in various applications.

Temperature Characteristics Code: X5R

X5R temperature characteristics code indicates stable capacitance change over a wide temperature range, making this capacitor suitable for temperature-sensitive applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in a variety of environmental conditions, making this capacitor suitable for demanding applications.

Capacitor Type: CERAMIC CAPACITOR

Ceramic capacitors are known for their high reliability, stability, and performance, making them a popular choice for various electronic applications.

Capacitance: 1 uF

1uF capacitance value is suitable for filtering, bypassing, and decoupling applications in electronic circuits, providing the desired impedance characteristics.

Rated DC Voltage (URdc): 6.3 V

6.3V rated DC voltage ensures compatibility with low voltage electronic systems, making this capacitor ideal for use in various electronic devices.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11APX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

14

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT11APX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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