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BUT11ATU

Onsemi

BUT11ATU by Onsemi

BUT11ATU by Onsemi is a NPN BJT transistor with 450V max collector-emitter voltage, ideal for switching applications. Featuring a max power dissipation of 100W and 5A max collector current, it operates at up to 150°C. Its through-hole terminal form and single configuration make it suitable for various power electronics projects.

Median Price

$0.636

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 82,650 parts In-Stock

1+ parts

-

100+ parts

$0.636

1k+ parts

$0.527

10k+ parts

$0.470

82,650

-

$0.636

$0.527

$0.470

Verical

USA . 81,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.659

10k+ parts

$0.588

81,900

-

-

$0.659

$0.588

DigiKey

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.400

10k+ parts

-

1,000

-

-

$0.400

-

Flip Electronics (Authorized)

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,231 parts In-Stock

1+ parts

$0.494

100+ parts

-

1k+ parts

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1,231

$0.494

-

-

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Vyrian

USA . 49,471 parts In-Stock

1+ parts

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49,471

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Chip Stock

USA . 3,536 parts In-Stock

1+ parts

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3,536

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-

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Flip Electronics

USA . 1,000 parts In-Stock

1+ parts

-

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-

1,000

-

-

-

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DigiKey Marketplace

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.500

10k+ parts

-

1,000

-

-

$0.500

-

VNN

France . 450 parts In-Stock

1+ parts

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450

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Nova Conductors

Japan . 450 parts In-Stock

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450

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 59,261 parts In-Stock

1+ parts

$0.442

100+ parts

-

1k+ parts

-

10k+ parts

-

59,261

$0.442

-

-

-

Semicontronic

India . 58,866 parts In-Stock

1+ parts

$0.442

100+ parts

$0.431

1k+ parts

$0.429

10k+ parts

-

58,866

$0.442

$0.431

$0.429

-

Corphita

USA . 2,944 parts In-Stock

1+ parts

$0.468

100+ parts

-

1k+ parts

-

10k+ parts

-

2,944

$0.468

-

-

-

Corohmni

South Africa . 70 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

-

10k+ parts

-

70

$0.500

-

-

-

Andel Nordic

Denmark . 98 parts In-Stock

1+ parts

$0.530

100+ parts

-

1k+ parts

$0.368

10k+ parts

$0.368

98

$0.530

-

$0.368

$0.368

Component Stockers USA

USA . 2,671 parts In-Stock

1+ parts

$0.540

100+ parts

$0.510

1k+ parts

$0.460

10k+ parts

$0.460

2,671

$0.540

$0.510

$0.460

$0.460

Aztec Data Supply Inc.

USA . 924 parts In-Stock

1+ parts

$1.362

100+ parts

-

1k+ parts

-

10k+ parts

-

924

$1.362

-

-

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 23,111 parts In-Stock

1+ parts

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23,111

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-

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A-Z Elektronik GmbH

Germany . 6,548 parts In-Stock

1+ parts

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6,548

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

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6,000

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SupplyDigital Components

Austria . 5,519 parts In-Stock

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5,519

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Kulean Microsystems

USA . 4,873 parts In-Stock

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4,873

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-

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Problanco Electronics

Mexico . 4,784 parts In-Stock

1+ parts

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4,784

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-

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Alle Elektronik GmbH

Germany . 4,365 parts In-Stock

1+ parts

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4,365

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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-

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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-

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TANS Electronics

Latvia . 3,880 parts In-Stock

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3,880

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Perfect Parts

USA . 3,287 parts In-Stock

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3,287

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-

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Continental Prestige Electronics

USA . 3,277 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.470

10k+ parts

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3,277

-

-

$0.470

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Supply Digital

USA . 1,454 parts In-Stock

1+ parts

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100+ parts

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1,454

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-

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Argo Parts USA

USA . 1,319 parts In-Stock

1+ parts

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100+ parts

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1,319

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UHIMA Technologies

Türkiye . 767 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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767

-

-

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

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100+ parts

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100

-

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-

-

Overview

Unlock the power of innovation with the BUT11ATU by Onsemi. Crafted with precision and expertise, Onsemi's Power Bipolar Junction Transistor (BJT) offers unparalleled performance in a variety of applications such as switching. With a maximum power dissipation of 100W and a maximum collector-emitter voltage of 450V, this NPN transistor provides reliable and efficient operation. Trust in Onsemi's reputation for quality and excellence to deliver the results you need. Elevate your projects with the BUT11ATU and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability, making the transistor suitable for various operating environments.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, offering high performance and reliability.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in different electronic projects.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and fast switching capabilities.

Package Shape: RECTANGULAR

Compact shape allows for easy mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Enables easy soldering and strong mechanical connections on PCBs, ensuring reliability in circuit connections.

Maximum Power Dissipation (Abs): 100 W

With a high power dissipation rating, the transistor can handle high power loads without overheating or damaging the device.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation, ensuring stable operation even in demanding environments.

Minimum DC Current Gain (hFE): 10

Provides sufficient current gain for proper amplification and switching functionality in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for applications with increased thermal demands.

Maximum Collector-Emitter Voltage: 450 V

High collector-emitter voltage rating allows for safe operation in circuits with high voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance, reliability, and efficiency in electronic applications.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, making it suitable for power-hungry applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability of connections.

Terminal Position: SINGLE

Simplified terminal design for easy connection in circuits, enhancing ease of use and integration.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11ATU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT11ATU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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