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BUT11APX-1200,127

NXP Semiconductors

BUT11APX-1200,127 by NXP Semiconductors

NXP Semiconductors' BUT11APX-1200,127 is a NPN BJT transistor with 550V VCE, 6A IC, and 32W Ptot. Ideal for switching applications in power electronics due to its high voltage and current ratings. Package style is flange mount with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,155 parts In-Stock

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Anansix

USA . 2,094 parts In-Stock

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Digiode

USA . 1,334 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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VNN

France . 27 parts In-Stock

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Corohmni

South Africa . 408 parts In-Stock

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$0.419

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Aztec Data Supply Inc.

USA . 50,924 parts In-Stock

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$1.561

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Semicontronic

India . 1,395 parts In-Stock

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$4.050

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$3.949

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$3.928

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AZTECH Wire

Italy . 634 parts In-Stock

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Ampacity Inc.

Singapore . 1,411 parts In-Stock

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$22.050

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One Stop Electronics

USA . 1,256 parts In-Stock

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$34.050

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UNI Independent Distributors

Spain . 3,195 parts In-Stock

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Corphita

USA . 2,776 parts In-Stock

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Continental Prestige Electronics

USA . 2,440 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Enhance your electronic projects with the BUT11APX-1200,127 by NXP Semiconductors. As a leading manufacturer in the industry, NXP guarantees top-notch quality and reliability. This power bipolar junction transistor is perfect for switching applications, offering a maximum collector current of 6A and a maximum collector-emitter voltage of 550V. With a minimum DC current gain of 20, this transistor provides efficient performance while ensuring high power dissipation at 32W. Upgrade your designs today with the BUT11APX-1200,127 and experience superior functionality and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Allows for easy integration into NPN circuits, enhancing compatibility and versatility.

Configuration: SINGLE

Simplified design and operation for straightforward use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: RECTANGULAR

Facilitates easy mounting and positioning within electronic circuits.

No. of Terminals: 3

Provides the necessary connections for proper functionality while keeping the design simple.

Maximum Power Dissipation (Abs): 32 W

Capable of handling high power loads, making it suitable for demanding applications.

Package Style: FLANGE MOUNT

Enables secure mounting and heat dissipation, enhancing overall performance.

Minimum DC Current Gain (hFE): 20

Ensures adequate amplification of current flow, improving efficiency and reliability.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, expanding the range of operating environments.

Maximum Collector-Emitter Voltage: 550 V

Allows for high voltage handling capabilities, suitable for diverse circuit requirements.

Transistor Element Material: SILICON

Provides the benefits of silicon technology, such as high performance and reliability.

Maximum Collector Current (IC): 6 A

Capable of handling high current loads, making it suitable for various power applications.

Terminal Finish: TIN

Provides a reliable and corrosion-resistant terminal finish for stable connections.

Terminal Position: SINGLE

Simplifies the connection process and enhances circuit design simplicity.

Case Connection: ISOLATED

Ensures electrical isolation for enhanced safety and compatibility in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11APX-1200,127 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

550 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT11APX-1200,127 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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