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BUT11TU

Onsemi

BUT11TU by Onsemi

BUT11TU by Onsemi is a NPN BJT transistor with 400V max collector-emitter voltage, 5A max collector current, and 100W max power dissipation. Ideal for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

Median Price

$0.529

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16,533 parts In-Stock

1+ parts

-

100+ parts

$0.510

1k+ parts

$0.423

10k+ parts

$0.377

16,533

-

$0.510

$0.423

$0.377

DigiKey

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

-

15,000

-

-

$0.630

-

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.529

10k+ parts

$0.471

15,000

-

-

$0.529

$0.471

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,102 parts In-Stock

1+ parts

$0.391

100+ parts

-

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-

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-

1,102

$0.391

-

-

-

Vyrian

USA . 2,824 parts In-Stock

1+ parts

$0.412

100+ parts

-

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-

10k+ parts

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2,824

$0.412

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,085 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

10k+ parts

-

1,085

$0.371

-

-

-

Corohmni

South Africa . 418 parts In-Stock

1+ parts

$0.412

100+ parts

-

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-

418

$0.412

-

-

-

Continental Prestige Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.372

10k+ parts

-

15,000

-

-

$0.372

-

SupplyDigital Components

Austria . 8,324 parts In-Stock

1+ parts

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100+ parts

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8,324

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-

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Problanco Electronics

Mexico . 7,100 parts In-Stock

1+ parts

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7,100

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Kulean Microsystems

USA . 4,089 parts In-Stock

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4,089

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Supply Digital

USA . 2,787 parts In-Stock

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2,787

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Perfect Parts

USA . 2,239 parts In-Stock

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2,239

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Northwest PG Solutions

USA . 1,697 parts In-Stock

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1,697

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TANS Electronics

Latvia . 1,352 parts In-Stock

1+ parts

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1,352

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 940 parts In-Stock

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940

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Native Components

USA . 257 parts In-Stock

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257

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Overview

Upgrade your power switching applications with the BUT11TU from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Power Bipolar Junction Transistors. The BUT11TU offers a maximum collector-emitter voltage of 400 V and a maximum collector current of 5 A, making it a versatile choice for a wide range of projects. With a maximum power dissipation of 100 W, this NPN transistor provides efficient performance while maintaining a compact design. Trust Onsemi to deliver high-performance components that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Suitable for most common electronic circuit designs.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Optimized for high efficiency switching applications.

Package Shape: RECTANGULAR

Ease of handling and mounting in various applications.

Terminal Form: THROUGH-HOLE

Suitable for through-hole PCB assembly process.

No. of Terminals: 3

Standard contact points for easy connection in circuits.

Maximum Power Dissipation (Abs): 100 W

Can handle high power dissipation for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation.

Minimum DC Current Gain (hFE): 10

Provides consistent amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures.

Maximum Collector-Emitter Voltage: 400 V

Suitable for high voltage applications.

Transistor Element Material: SILICON

Offers high reliability and performance compared to other materials.

Maximum Collector Current (IC): 5 A

Capable of handling high current loads.

Terminal Finish: TIN

Provides good conductivity and solderability.

Terminal Position: SINGLE

Simplified connection for ease of use.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT11TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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