Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
MD1803DFX
STMicroelectronics
MD1803DFX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 57W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
ISOLATED
10 A
700 V
SINGLE WITH BUILT-IN DIODE
5
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NPN
57 W
Not Qualified
Other Transistors
NO
MATTE TIN
THROUGH-HOLE
SINGLE
AMPLIFIER
SILICON
BD245A-S
Bourns
BD245A-S by Bourns is a NPN BJT transistor with max. 60V VCE, 10A IC, and min. hFE of 4. Ideal for switching applications at up to 150°C operating temp in through-hole package style.
COLLECTOR
60 V
4
e1
TIN SILVER COPPER
SWITCHING
BD743B-S
The Bourns BD743B-S is a NPN power BJT with 80V VCE, 15A IC, and 90W Ptot. Ideal for switching applications, it has a min hFE of 5 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals for easy mounting.
15 A
80 V
TO-220AB
90 W
BDW93C-S
The Bourns BDW93C-S is a NPN Darlington transistor with hFE of 100, IC of 12A, and VCE of 100V. Ideal for power applications in temperatures up to 150°C. Suitable for use in various electronic circuits requiring high current amplification.
12 A
100 V
DARLINGTON
100
MD2009DFX
MD2009DFX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 58W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
BUILT-IN BIAS RESISTORS
SINGLE WITH BUILT-IN DIODE AND RESISTOR
58 W
SN75468NE4
Texas Instruments
SN75468NE4 by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. Ideal for switching applications in temperatures ranging from 0 to 70°C, it features a PLASTIC/EPOXY package with 16 terminals in an IN-LINE style.
LOGIC LEVEL COMPATIBLE
.5 A
COMPLEX
MS-001BB
R-PDIP-T16
e4
7
16
70 Cel
0 Cel
IN-LINE
NICKEL PALLADIUM GOLD
DUAL
1.6 V
MJL0281AG
Onsemi
The Onsemi MJL0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and features a PLASTIC/EPOXY package with FLANGE MOUNT style.
260 V
75
TO-264AA
TIN
30 MHz
2N6034G
2N6034G by Onsemi is a PNP BJT with 40V VCEO, 4A IC, and 25MHz fT. Ideal for amplifier applications, it features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals. Max power dissipation of 1.5W at 150 °C ensures reliable performance in various environments.
4 A
40 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
TO-225AA
PNP
1.5 W
25 MHz
2ST1480FP
2ST1480FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 25W, collector-emitter voltage of 80V, and operates up to 150 °C. Ideal for efficient control in electronic circuits.
5 A
50
25 W
120 MHz
2STW100
2STW100 by STMicroelectronics is a powerful NPN Darlington transistor designed for switching applications. It features a max power dissipation of 130 W, a collector current of 25 A, and operates up to 150 °C. Ideal for high-efficiency circuits with robust performance.
25 A
300
TO-247
130 W
2STW200
2STW200 by STMicroelectronics is a PNP Darlington BJT designed for switching applications. It features a max power dissipation of 130 W, a min DC current gain (hFE) of 300, and operates up to 150 °C. Ideal for high-power circuits with an 80 V collector-emitter voltage.
BULT3P3
BULT3P3 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 32W, operates up to 150 °C, and supports collector-emitter voltages up to 200V. Ideal for efficient circuit designs in various electronic devices.
3 A
200 V
TO-126
32 W
ST13003N
ST13003N from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 20W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for various electronic circuits requiring reliable performance.
1 A
400 V
20 W
STD815CP40
STD815CP40 by STMicroelectronics is a versatile power BJT featuring NPN and PNP configurations for efficient switching applications. It supports a max collector-emitter voltage of 400V, operates up to 150 °C, and offers a min DC gain (hFE) of 4. Ideal for dual-element designs in various electronic circuits.
1.5 A
SEPARATE, 2 ELEMENTS
R-PDIP-T8
2
8
NPN AND PNP
BIP General Purpose Small Signal
STD830CP40
STD830CP40 by STMicroelectronics is a versatile NPN/PNP power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, operates at up to 150 °C, and supports a collector current of 3A. Ideal for efficient circuit designs in various electronic devices.
BUL704
BUL704 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.
14
70 W
Matte Tin (Sn)
HD1530FX
HD1530FX by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 70W and a collector-emitter voltage of 700V. It operates at up to 150 °C with a min DC current gain of 5.5. Ideal for high-performance applications in various electronic circuits.
26 A
5.5
HD1530JL
HD1530JL by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
200 W
ST8812FP
ST8812FP by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 36W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-power circuits with through-hole mounting.
7 A
600 V
4.5
36 W
ST8812FX
ST8812FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 50W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
50 W
BUL3P5
BUL3P5 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient control in electronic circuits.
60 W
STC08IE120HV
STC08IE120HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 208 W, operates up to 150 °C, and supports collector-emitter voltages of 1200 V. Ideal for high-performance electronic circuits.
8 A
1200 V
SINGLE WITH BUILT-IN FET AND DIODE
208 W
2SB817C-1E
The Onsemi 2SB817C-1E is a PNP BJT transistor with max. collector-emitter voltage of 140V and max. collector current of 12A. With a min DC current gain of 35 and nominal transition frequency of 10MHz, it's ideal for switching applications in various electronic circuits.
140 V
35
10 MHz
2SA1962O(Q)
Toshiba
Toshiba's 2SA1962O(Q) is a PNP BJT transistor with max. power dissipation of 130W, max. collector-emitter voltage of 230V, and max. collector current of 15A. Ideal for amplifier applications due to its single configuration and silicon element material, it operates at up to 150°C temperature with a nominal transition frequency of 30MHz.
230 V
80
2SC5242O(Q)
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;
260
30
TTC5460B,Q(S
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5.5 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: PLASTIC/EPOXY;
.05 A
800 V
15
5.5 MHz
2SC5171,Q(J
2SC5171,Q(J by Toshiba is a NPN BJT transistor with max. Vce of 180V and max. Ic of 2A. It has hFE of 50, ideal for amplifier applications due to its high transition frequency of 200MHz. The package style is flange mount with through-hole terminals in a rectangular shape, making it suitable for various electronic designs.
2 A
180 V
200 MHz
2N3716PBFREE
Central Semiconductor
2N3716PBFREE by Central Semiconductor is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its fast rise and fall times of 400ns.
400 ns
TO-3
O-MBFM-P2
200 Cel
-65 Cel
METAL
ROUND
150 W
MATTE TIN OVER NICKEL
PIN/PEG
BOTTOM
4 MHz
700 ns
.8 V
2N4237PBFREE
2N4237PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.6V, hFE of 30, and IC of 3A. Ideal for switching applications due to its low saturation voltage and high collector current capacity. Operates in temperatures ranging from -65°C to 200°C, making it suitable for various industrial uses.
100 pF
TO-39
O-MBCY-W3
CYLINDRICAL
6 W
WIRE
2 MHz
.6 V
TIP29CPBFREE
TIP29CPBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.7V, hFE of 15, and IC of 1A. Ideal for switching applications, it has a max power dissipation of 30W and operates b/w -65 to 150°C. Its through-hole terminals make it suitable for various electronic devices.
2 W
30 W
3 MHz
.7 V
2N6055PBFREE
2N6055PBFREE by Central Semiconductor is a NPN Darlington BJT with max. collector-emitter voltage of 60V and max. collector current of 8A. It has a min DC current gain of 100, making it ideal for switching applications in various industries due to its high transition frequency of 4MHz and wide operating temperature range from -65°C to 200°C.
2N6107PBFREE
2N6107PBFREE by Central Semiconductor is a PNP BJT with hFE of 30, VCEO of 70V, and IC of 7A. Ideal for switching applications due to its single configuration and silicon element material. Features flange mount style with through-hole terminals in a rectangular package shape.
70 V
MPQ2222APBFREE
MPQ2222APBFREE by Central Semiconductor is a NPN Power BJT with 4 separate elements. It has a max VCEsat of 0.3V, ideal for switching applications. With a max VCE of 40V and fT of 200MHz, it's suitable for high-speed circuits in various electronic devices.
8 pF
SEPARATE, 4 ELEMENTS
40
TO-116
R-PDIP-T14
3 W
.3 V
2N6052PBFREE
2N6052PBFREE by Central Semiconductor is a PNP Darlington power BJT with a max VCEsat of 3V. It is used for switching applications and has a max collector-emitter voltage of 100V.
500 pF
10
3 V
MJE13005PBFREE
MJE13005PBFREE by Central Semiconductor is a NPN BJT transistor for switching applications. It has VCEsat of 1V, IC of 4A, and hFE of 8. With max power dissipation of 75W, it operates b/w -65 to 150°C. Ideal for high-power switching circuits due to its fast rise/fall times and low collector-emitter voltage drop.
130 pF
900 ns
75 W
4900 ns
800 ns
1 V
2N3053APBFREE
2N3053APBFREE by Central Semiconductor is a NPN BJT with VCEsat of 0.3V, hFE of 50, and IC of 0.7A. Ideal for power applications, it has a max operating temp of 200°C and fT of 100MHz. With a collector-emitter voltage of 60V, it suits various electronic designs requiring high power dissipation up to 5W.
.7 A
15 pF
5 W
100 MHz
TIP112PBFREE
TIP112PBFREE by Central Semiconductor is a NPN Darlington BJT with 2.5V VCEsat, 50W power dissipation, and 100V VCEO. Ideal for amplifier applications, it has a hFE of 500 and operates b/w -65 to 150 °C. Package style is flange mount with matte tin over nickel finish in a rectangular shape with through-hole terminals.
500
2.5 V
TIP112TIN/LEAD
TIP112TIN/LEAD by Central Semiconductor is a NPN Darlington BJT with max VCEsat of 2.5V, hFE of 500, and IC of 2A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a max power dissipation of 50W in a plastic package style.
e0
TIN LEAD
2SB1203T-H
The Onsemi 2SB1203T-H is a NPN Power BJT with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. The transistor comes in a plastic/epoxy package with through-hole terminals, making it suitable for various power electronics designs.
40 pF
50 V
R-PSIP-T3
e6
1 W
TIN BISMUTH
180 MHz
.4 V
BD244CTU
The Onsemi BD244CTU is a PNP BJT transistor with max VCEsat of 1.5V, IC of 6A, and hFE of 15. Ideal for switching applications, it operates b/w -65 to 150°C with a max VCE of 100V. Its package style is flange mount with through-hole terminals in a rectangular shape.
6 A
65 W
Matte Tin (Sn) - annealed
1.5 V
KSC1173YTSTUA
KSC1173YTSTUA by Onsemi is a NPN BJT transistor with max VCEsat of 0.8V, hFE of 120, and IC of 3A. Ideal for amplifier applications, it has a max operating temp of 150 °C and collector-emitter voltage of 30V. The package style is flange mount with through-hole terminals in a rectangular shape.
35 pF
30 V
120
10 W
MJE270TG
MJE270TG by Onsemi is a NPN Darlington BJT with max VCEsat of 3V, hFE of 1500, and IC of 2A. Ideal for power applications, it has a max power dissipation of 15W and operates b/w -65 to 150 °C. Suitable for use in various electronic circuits requiring high current amplification.
1500
TO-225
15 W
6 MHz
TTA004B,Q
TTA004B,Q by Toshiba is a PNP BJT transistor with 160V VCE, 0.5V VCEsat, and 1.5A IC. Ideal for amplifier applications, it has a max power dissipation of 10W and hFE of 140. With a package style of FLANGE MOUNT and operating temp up to 150°C, it offers high performance in through-hole configuration.
17 pF
160 V
140
.5 V
2SA1943N(S1,E,S)
Toshiba's 2SA1943N(S1,E,S) is a PNP BJT with max VCEsat of 3V, ideal for amplifier applications. With a max power dissipation of 150W and max collector-emitter voltage of 230V, it offers high performance in audio amplifiers. Featuring a min hFE of 35 and fT of 30MHz, this transistor ensures efficient signal processing in various electronic circuits.
360 pF
R-XSFM-T3
UNSPECIFIED
© 2023 All rights reserved
