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SN75468NE4

Texas Instruments

SN75468NE4 by Texas Instruments

SN75468NE4 by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. Ideal for switching applications in temperatures ranging from 0 to 70°C, it features a PLASTIC/EPOXY package with 16 terminals in an IN-LINE style.

Median Price

$0.519

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 400 parts In-Stock

1+ parts

$0.350

100+ parts

$0.340

1k+ parts

$0.340

10k+ parts

-

400

$0.350

$0.340

$0.340

-

Mouser Electronics

USA . 76 parts In-Stock

1+ parts

$1.770

100+ parts

$0.752

1k+ parts

$0.539

10k+ parts

$0.445

76

$1.770

$0.752

$0.539

$0.445

Avnet

USA . 62 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.519

10k+ parts

$0.479

62

-

-

$0.519

$0.479

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,151 parts In-Stock

1+ parts

$0.393

100+ parts

-

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-

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1,151

$0.393

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Vyrian

USA . 2,400 parts In-Stock

1+ parts

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2,400

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Pegasus Components GmbH

Germany . 406 parts In-Stock

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406

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,929 parts In-Stock

1+ parts

$0.373

100+ parts

-

1k+ parts

-

10k+ parts

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1,929

$0.373

-

-

-

Parana Technologies

USA . 1,215 parts In-Stock

1+ parts

$0.589

100+ parts

-

1k+ parts

$1.674

10k+ parts

-

1,215

$0.589

-

$1.674

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DigiPath Technology Company

USA . 1,156 parts In-Stock

1+ parts

$0.649

100+ parts

$0.597

1k+ parts

-

10k+ parts

-

1,156

$0.649

$0.597

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ChromeModa Solutions

Germany . 5,141 parts In-Stock

1+ parts

$0.662

100+ parts

$0.543

1k+ parts

-

10k+ parts

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5,141

$0.662

$0.543

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IDEA Electronic Components Group

UK . 805 parts In-Stock

1+ parts

$0.662

100+ parts

-

1k+ parts

$0.596

10k+ parts

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805

$0.662

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$0.596

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Microchip USA

USA . 9,090 parts In-Stock

1+ parts

$3.445

100+ parts

-

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9,090

$3.445

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Perfect Parts

USA . 737 parts In-Stock

1+ parts

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737

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Infinite Electronics LLP (Excess)

. 668 parts In-Stock

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668

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Overview

Unlock the power of innovation with the SN75468NE4 by Texas Instruments. Designed with precision and expertise, this Power BJT transistor offers unparalleled performance in switching applications. With a maximum VCEsat of 1.6V and a maximum collector-emitter voltage of 100V, this transistor provides reliable and efficient operation. Whether you're working on automotive electronics, industrial controls, or robotics, the SN75468NE4 delivers the quality and value you need to bring your projects to life. Trust in Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliability in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and fast switching speeds.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering high performance and efficiency in controlling current flow.

Maximum VCEsat: 1.6 V

Low saturation voltage helps minimize power loss and improves overall efficiency of the circuit.

Maximum Collector-Emitter Voltage: 100 V

Allows for high voltage operations, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for many switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SN75468NE4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JEDEC-95 Code:

MS-001BB

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

SN75468NE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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