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SN75467N

Texas Instruments

SN75467N by Texas Instruments

SN75467N by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It is designed for switching applications, featuring a complex configuration in a rectangular package style. The transistor element material is silicon, housed in a plastic/epoxy body suitable for through-hole mounting.

Median Price

$1.568

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Vyrian

USA . 8,899 parts In-Stock

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Microfarads

USA . 2,025 parts In-Stock

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Digiode

USA . 1,650 parts In-Stock

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Bristol Electronics

USA . 1,375 parts In-Stock

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$1.568

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$1.378

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$1.378

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J & M Industries LLC

USA . 45 parts In-Stock

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LittleDiode

UK . 12 parts In-Stock

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Electronic Expediters

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GES GmbH

Germany . 7 parts In-Stock

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EMSNET

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Distributors (Availability)

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Parana Technologies

USA . 473 parts In-Stock

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$1.056

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$1.914

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473

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$1.914

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DigiPath Technology Company

USA . 558 parts In-Stock

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$1.163

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$1.070

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558

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ChromeModa Solutions

Germany . 4,663 parts In-Stock

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$1.187

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$0.973

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IDEA Electronic Components Group

UK . 1,372 parts In-Stock

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$1.187

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$1.068

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AZTECH Wire

Italy . 621 parts In-Stock

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$7.004

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One Stop Electronics

USA . 1,597 parts In-Stock

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$9.050

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A-Z Elektronik GmbH

Germany . 5,180 parts In-Stock

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Corphita

USA . 4,027 parts In-Stock

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Assy Fe

Spain . 2,351 parts In-Stock

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Kepictronics

USA . 794 parts In-Stock

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Overview

Unleash the power of innovation with the SN75467N by Texas Instruments! Crafted with precision and quality, this complex NPN transistor is perfect for switching applications. With 7 elements and 16 terminals in a sleek rectangular package, this product offers unparalleled value and benefits to customers looking for reliable performance. Whether you're a hobbyist or a professional, this versatile transistor will exceed your expectations in various electronic projects. Trust Texas Instruments to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection to the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and suitable for a wide range of electronic circuits.

Configuration: COMPLEX

The complex configuration indicates that this transistor is designed for more advanced circuitry and applications, offering enhanced performance and functionality.

Transistor Application: SWITCHING

Being specifically designed for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for power control and regulation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit layouts and ensures a compact design, saving space on the PCB.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong connections and are easy to solder, providing reliable electrical connections and making it easier for manual assembly.

No. of Elements: 7

The presence of 7 elements indicates that this transistor has multiple functionalities and can handle complex circuit requirements with ease.

No. of Terminals: 16

The 16 terminals provide ample connectivity options, allowing for versatile circuit designs and configurations to meet various application needs.

Package Style (Meter): IN-LINE

The in-line package style facilitates easy mounting on a PCB or within a circuit, enabling efficient assembly and enhancing overall circuit reliability.

Transistor Element Material: SILICON

Silicon material for the transistor element offers high conductivity, low power consumption, and excellent temperature stability, ensuring reliable and consistent performance.

Terminal Position: DUAL

The dual terminal position allows for increased flexibility in circuit design and placement, accommodating various layout requirements and enhancing design possibilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SN75467N attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Configuration:

JESD-30 Code:

R-PDIP-T16

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SN75467N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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