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SN75469N

Texas Instruments

SN75469N by Texas Instruments

SN75469N by Texas Instruments is a NPN BJT transistor with 1.6V VCEsat, 100V VCEmax, and 0.5A IC. It is used for switching applications in various electronic circuits due to its complex configuration and SILICON material. The package style is IN-LINE with 16 terminals and can operate b/w 0-70°C temperature range.

Median Price

$1.358

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 77 parts In-Stock

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$0.476

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$0.448

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$0.405

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77

$0.476

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$0.405

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DigiKey

USA . 16,390 parts In-Stock

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$2.240

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$0.970

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$0.709

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$0.566

16,390

$2.240

$0.970

$0.709

$0.566

Mouser Electronics

USA . 2,043 parts In-Stock

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$2.240

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$0.971

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$0.708

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$0.566

2,043

$2.240

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$0.566

Arrow

USA . 350 parts In-Stock

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$0.394

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$0.355

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Distributors (In-Stock)

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Digiode

USA . 3,617 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Vyrian

USA . 6,244 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 330 parts In-Stock

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ECAB

Sweden . 233 parts In-Stock

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Pegasus Components GmbH

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Holdelec - ElecDif-Pro

France . 152 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Cyclops Electronics Ltd

UK . 117 parts In-Stock

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Resion

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NAC Semi

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Prism Electronics

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Ack Elektronik San.Tic.Ltd.Sti

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Digital Electronic Gebert Verwaltungs UG

Germany . 59 parts In-Stock

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Lakeview Electronics

USA . 50 parts In-Stock

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GES GmbH

Germany . 40 parts In-Stock

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Huijzer Components

Netherlands . 30 parts In-Stock

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LittleDiode

UK . 21 parts In-Stock

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Semtec, LLC

USA . 20 parts In-Stock

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Ace Electronics

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Manotoh

Italy . 10 parts In-Stock

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Halfin

Belgium . 10 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 10 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 8 parts In-Stock

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MISTER SPROCKETS

USA . 3 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,399 parts In-Stock

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$0.335

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$0.335

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Semicontronic

India . 6,220 parts In-Stock

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$0.335

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$0.327

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$0.325

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$0.335

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Corphita

USA . 2,253 parts In-Stock

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$0.428

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Continental Prestige Electronics

USA . 5,257 parts In-Stock

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$0.474

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$0.464

5,257

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Netroflash

USA . 2,000 parts In-Stock

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$0.474

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2,000

$0.474

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Argo Parts USA

USA . 773 parts In-Stock

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$0.474

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$0.460

773

$0.474

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$0.460

Corohmni

South Africa . 47 parts In-Stock

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$0.477

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47

$0.477

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Parana Technologies

USA . 1,197 parts In-Stock

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$0.737

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$1.751

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1,197

$0.737

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$1.751

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DigiPath Technology Company

USA . 2,066 parts In-Stock

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$0.811

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$0.747

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2,066

$0.811

$0.747

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ChromeModa Solutions

Germany . 1,713 parts In-Stock

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$0.828

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$0.679

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$0.828

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IDEA Electronic Components Group

UK . 1,006 parts In-Stock

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$0.828

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$0.745

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1,006

$0.828

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$0.745

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A-Z Elektronik GmbH

Germany . 6,934 parts In-Stock

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Assy Fe

Spain . 2,910 parts In-Stock

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Kepictronics

USA . 1,652 parts In-Stock

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SIE Connect GmbH (Excess)

Germany . 170 parts In-Stock

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Overview

Enhance your electronic projects with the Texas Instruments SN75469N Power Bipolar Junction Transistor. With a reputation for quality and reliability, Texas Instruments delivers unmatched performance in the field of switching applications. This versatile component offers customers superior value and benefits, providing a maximum VCEsat of 1.6V and a maximum collector-emitter voltage of 100V. Whether you're a hobbyist or a professional, the SN75469N is sure to meet your needs with its efficient design and durable construction. Upgrade your circuits today with Texas Instruments' trusted technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various electronic designs.

Configuration: COMPLEX

The complex configuration allows for advanced circuit design and precise control, making this transistor suitable for sophisticated applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and high efficiency in turning on and off, making it ideal for power control circuits.

Maximum VCEsat: 1.6 V

The low maximum VCEsat voltage of 1.6 V indicates minimal power loss when the transistor is in the saturation region, contributing to high efficiency in circuit operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and space-saving integration into circuit boards, making installation convenient and efficient.

No. of Elements: 7

With 7 elements integrated into a single package, this transistor offers enhanced functionality and versatility for complex electronic designs.

No. of Terminals: 16

The 16 terminals provide ample connectivity options for interfacing with external components, allowing for versatile circuit configurations and applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this transistor can withstand higher heat levels, ensuring reliable performance in various environments.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage of 100 V allows for handling higher voltage levels in circuits, making this transistor suitable for power applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic components, ensuring stable performance and durability.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, this transistor can function in colder environments without loss of performance, ideal for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5 A allows for handling moderate power levels, making this transistor suitable for low to medium power applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections for long-term performance.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in circuit design and layout, allowing for convenient and efficient connections in various configurations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SN75469N attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JEDEC-95 Code:

MS-001BB

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

SN75469N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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