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SN75423N-90

Texas Instruments

SN75423N-90 by Texas Instruments

SN75423N-90 by Texas Instruments is a NPN BJT transistor with 100V max collector-emitter voltage and 0.5A max collector current. Ideal for switching applications, it features 8 elements in an 18-terminal rectangular package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,751 parts In-Stock

1+ parts

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3,751

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Digiode

USA . 2,468 parts In-Stock

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2,468

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Fibra_Brandt Electronic GMBH

Germany . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 220 parts In-Stock

1+ parts

$1.760

100+ parts

-

1k+ parts

$2.332

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220

$1.760

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$2.332

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DigiPath Technology Company

USA . 1,701 parts In-Stock

1+ parts

$1.938

100+ parts

$1.783

1k+ parts

-

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1,701

$1.938

$1.783

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IDEA Electronic Components Group

UK . 2,250 parts In-Stock

1+ parts

$1.978

100+ parts

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$1.780

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2,250

$1.978

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$1.780

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ChromeModa Solutions

Germany . 1,699 parts In-Stock

1+ parts

$1.978

100+ parts

$1.622

1k+ parts

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1,699

$1.978

$1.622

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AZTECH Wire

Italy . 655 parts In-Stock

1+ parts

$9.597

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655

$9.597

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One Stop Electronics

USA . 489 parts In-Stock

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$40.050

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489

$40.050

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A-Z Elektronik GmbH

Germany . 6,173 parts In-Stock

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6,173

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Corphita

USA . 1,156 parts In-Stock

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1,156

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Overview

Enhance your electronic designs with the SN75423N-90 by Texas Instruments! As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their Power Bipolar Junction Transistors. This versatile component is perfect for various switching applications, offering a maximum collector-emitter voltage of 100V and a collector current of 0.5A. With 8 elements and 18 terminals in a convenient rectangular package, the SN75423N-90 provides exceptional value and performance for your projects. Upgrade your circuits today with this high-quality transistor from Texas Instruments!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: COMPLEX

The complex configuration allows for more advanced circuit design and functionality.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and low power consumption.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 100 V

Can handle high voltages, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.5 A

Can handle currents up to 0.5 A, making it suitable for low to moderate power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and layout.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SN75423N-90 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JESD-30 Code:

R-PDIP-T18

No. of Elements:

8

No. of Terminals:

18

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SN75423N-90 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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