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SN75424N

Texas Instruments

SN75424N by Texas Instruments

SN75424N by Texas Instruments is a NPN BJT transistor with 100V max collector-emitter voltage and 0.5A max collector current. It is used for switching applications in various electronic circuits due to its complex configuration and 8 elements. The package style is in-line with 18 terminals, making it suitable for through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,309 parts In-Stock

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Digiode

USA . 1,274 parts In-Stock

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1,274

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Electronic Expediters

USA . 356 parts In-Stock

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356

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Digital Electronic Gebert Verwaltungs UG

Germany . 21 parts In-Stock

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21

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GES GmbH

Germany . 8 parts In-Stock

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8

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Distributors (Availability)

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Parana Technologies

USA . 2,005 parts In-Stock

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$1.226

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$2.011

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2,005

$1.226

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$2.011

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DigiPath Technology Company

USA . 552 parts In-Stock

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$1.349

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$1.242

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552

$1.349

$1.242

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IDEA Electronic Components Group

UK . 1,331 parts In-Stock

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$1.377

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$1.239

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$1.377

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$1.239

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ChromeModa Solutions

Germany . 626 parts In-Stock

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$1.377

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$1.129

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626

$1.377

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AZTECH Wire

Italy . 338 parts In-Stock

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$12.246

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338

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One Stop Electronics

USA . 593 parts In-Stock

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$29.050

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Corphita

USA . 511 parts In-Stock

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Assy Fe

Spain . 66 parts In-Stock

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Overview

Enhance your electronic projects with the reliable and high-quality SN75424N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch performance and durability in all their products. The SN75424N falls under the category of Power Bipolar Junction Transistors (BJT) and is ideal for switching applications. With its maximum collector-emitter voltage of 100V and maximum collector current of 0.5A, this transistor offers unmatched value and versatility to customers. Upgrade your projects today with the SN75424N and experience the difference in performance and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the transistor, ensuring a longer lifespan and better reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, offering good performance and efficiency.

Configuration: COMPLEX

Complex configuration allows for versatility in different circuit designs, making this transistor suitable for a range of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in high-speed switching circuits.

Package Shape: RECTANGULAR

Rectangular package shape makes it easy to mount and integrate into circuit boards, providing ease of installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and mechanical stability, making it suitable for applications where vibration or movement is a concern.

Maximum Collector-Emitter Voltage: 100 V

With a maximum collector-emitter voltage of 100V, this transistor can handle higher voltage applications, increasing its versatility.

Maximum Collector Current (IC): 0.5 A

Capable of handling a maximum collector current of 0.5A, allowing for reliable performance in moderate to low-power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and allows for easy connections, enhancing the usability of this transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SN75424N attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JESD-30 Code:

R-PDIP-T18

No. of Elements:

8

No. of Terminals:

18

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SN75424N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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