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SN75468N

Texas Instruments

SN75468N by Texas Instruments

SN75468N by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCE of 100V. It is used for switching applications in electronics due to its complex configuration and through-hole terminal form. Operating temperature ranges from 0°C to 70°C making it suitable for various environments.

Median Price

$0.974

Lifecycle Status

Suppliers In-Stock

52

In-Stock Inventory

1k+

Distributors (Authorized)

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Texas Instruments

USA . 5,736 parts In-Stock

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$0.736

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Arrow

USA . 1,075 parts In-Stock

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$1.100

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$0.727

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$0.507

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$0.468

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$1.100

$0.727

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$0.468

Element14

Singapore . 20 parts In-Stock

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$1.220

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$0.950

20

$1.220

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$0.990

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Bürklin Elektronik

Germany . 775 parts In-Stock

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$1.350

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$1.350

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DigiKey

USA . 1,545 parts In-Stock

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Mouser Electronics

USA . 1,143 parts In-Stock

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Future Electronics

Canada . 1,205 parts In-Stock

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Verical

USA . 1,075 parts In-Stock

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RS (Exports)

UK . 600 parts In-Stock

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Chip1Stop

Japan . 431 parts In-Stock

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Nova Conductors

Japan . 58 parts In-Stock

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Digiode

USA . 1,347 parts In-Stock

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Component Electronics Inc.

Canada . 1 parts In-Stock

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TEDSS.com

USA . 20 parts In-Stock

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TME

Poland . 186 parts In-Stock

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American Microsemiconductor Inc.

USA . 1,110 parts In-Stock

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Prism Electronics

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Vyrian

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Pride Electronics

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PC Components Company LLC

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Atlantic Semiconductor

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ABC Electronics Ltd.

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Pegasus Components GmbH

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Semi Source

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First Choice Components Inc.

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Inventory MP

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Electronic Expediters

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LIBRA Elektronik GmbH

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Sea View Technologies

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ComSIT Distribution GmbH

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ComSIT USA

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Holdelec - ElecDif-Pro

France . 40 parts In-Stock

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LittleDiode

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Fibra_Brandt Electronic GMBH

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Mentor Electronics Marketing, LLC

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Manoshevitz Elec. Sales

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M&R Communications

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Mil-Aero Solutions, Inc.

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MRC Electronics

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Electro Mavin

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Microfarads

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Inland Empire Components Inc.

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Digital Electronic Gebert Verwaltungs UG

Germany . 4 parts In-Stock

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Ampacity Inc.

Singapore . 896 parts In-Stock

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$0.433

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896

$0.433

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Continental Prestige Electronics

USA . 6,195 parts In-Stock

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$0.458

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$0.448

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$0.458

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$0.448

Argo Parts USA

USA . 1,430 parts In-Stock

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$0.458

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$0.444

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Corphita

USA . 2,930 parts In-Stock

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$0.662

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$0.662

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Benley Electronics

USA . 3 parts In-Stock

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$0.750

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Parana Technologies

USA . 1,874 parts In-Stock

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$0.987

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$1.876

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DigiPath Technology Company

USA . 1,237 parts In-Stock

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$1.087

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$1.000

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IDEA Electronic Components Group

UK . 901 parts In-Stock

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$0.998

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901

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ChromeModa Solutions

Germany . 258 parts In-Stock

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$1.109

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$0.909

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Corohmni

South Africa . 540 parts In-Stock

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$1.293

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Perfect Parts

USA . 13,311 parts In-Stock

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Assy Fe

Spain . 2,826 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,643 parts In-Stock

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iodParts Technologies Inc.

India . 722 parts In-Stock

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Kepictronics

USA . 390 parts In-Stock

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UK . 25 parts In-Stock

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Overview

Enhance your electronic projects with the SN75468N from Texas Instruments. Known for their high-quality components, Texas Instruments delivers reliable solutions for a wide range of applications. The SN75468N is a versatile Power Bipolar Junction Transistor that offers exceptional performance in switching applications. With a maximum VCEsat of 1.6V and a maximum collector-emitter voltage of 100V, this transistor provides efficiency and stability. Upgrade your designs with the SN75468N and experience the value and benefits that Texas Instruments brings to your projects.

Feature Benefit Bullets

Package Body Material

The use of plastic/epoxy material makes the product lightweight and durable, perfect for applications where weight and size are important considerations.

Polarity or Channel Type

NPN transistors are commonly used in switching applications due to their efficiency and reliability in amplifying and switching signals.

Configuration

The complex configuration allows for a wide range of applications and functionalities, making this transistor versatile and adaptable to different circuit designs.

Transistor Application

Designed specifically for switching applications, this transistor offers high speed and efficiency in turning on and off electrical signals, making it ideal for use in electronic switches.

Maximum VCEsat

With a low VCEsat of 1.6 V, this transistor exhibits minimal saturation voltage, resulting in reduced power dissipation and improved efficiency in switching operations.

Package Shape

The rectangular package shape allows for easy mounting and installation in circuit boards, providing convenience and flexibility in the assembly process.

No. of Elements

The presence of 7 elements in this transistor enhances its performance and functionality, enabling it to handle complex electronic tasks with precision and accuracy.

No. of Terminals

With 16 terminals, this transistor offers multiple connection points for seamless integration into circuit designs, enhancing versatility and compatibility with various electronic components.

Package Style (Meter)

The in-line package style makes this transistor suitable for applications where space is limited, allowing for compact and efficient installation in tight or crowded electronic devices.

Maximum Operating Temperature

The high maximum operating temperature of 70°C ensures reliable performance even in harsh environmental conditions, making this transistor suitable for a wide range of industrial and commercial applications.

Maximum Collector-Emitter Voltage

With a maximum collector-emitter voltage of 100 V, this transistor can handle higher voltage levels without breakdown or damage, offering enhanced safety and stability in circuit operations.

Transistor Element Material

Silicon is a widely used material for transistor elements due to its superior electrical properties and high-performance characteristics, providing excellent reliability and durability for long-term use.

Minimum Operating Temperature

The low minimum operating temperature of 0°C ensures that the transistor can operate effectively in cold environments or during temperature fluctuations, maintaining consistent performance under varying conditions.

Maximum Collector Current (IC)

With a maximum collector current of 0.5 A, this transistor can handle moderate levels of current flow with efficiency, making it suitable for applications requiring reliable and stable operation under continuous load conditions.

Terminal Finish

The use of nickel, palladium, and gold terminal finish provides excellent conductivity and corrosion resistance, ensuring robust and reliable electrical connections for enhanced performance and durability.

Terminal Position

The dual terminal position offers flexibility in circuit design and layout, allowing for easy connection to other components and devices, enhancing the versatility and compatibility of this transistor in various electronic applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SN75468N attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JEDEC-95 Code:

MS-001BB

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

SN75468N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-087-6729, 5962010876729

NIIN

010876729

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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