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SN75466N

Texas Instruments

SN75466N by Texas Instruments

SN75466N by Texas Instruments is a NPN power BJT transistor with 7 elements and 16 terminals. It has a min DC current gain of 1000, making it ideal for switching applications. The package style is in-line, with a rectangular shape and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,015 parts In-Stock

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8,015

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Digiode

USA . 4,300 parts In-Stock

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4,300

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ComSIT Distribution GmbH

Germany . 3,622 parts In-Stock

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ComSIT USA

USA . 3,622 parts In-Stock

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Pegasus Components GmbH

Germany . 870 parts In-Stock

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R&J Components

USA . 30 parts In-Stock

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30

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Digital Electronic Gebert Verwaltungs UG

Germany . 16 parts In-Stock

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16

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A2Z Electronics, Inc.

USA . 15 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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10

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Fibra_Brandt Electronic GMBH

Germany . 9 parts In-Stock

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Huijzer Components

Netherlands . 5 parts In-Stock

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LWI Electronics Inc

India . 1 parts In-Stock

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Parana Technologies

USA . 756 parts In-Stock

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$0.539

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$1.647

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756

$0.539

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$1.647

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ChromeModa Solutions

Germany . 3,150 parts In-Stock

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$0.606

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$0.497

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$0.606

$0.497

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IDEA Electronic Components Group

UK . 408 parts In-Stock

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$0.606

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$0.545

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408

$0.606

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$0.545

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AZTECH Wire

Italy . 514 parts In-Stock

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$7.691

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514

$7.691

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One Stop Electronics

USA . 314 parts In-Stock

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$29.050

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A-Z Elektronik GmbH

Germany . 10,482 parts In-Stock

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Corphita

USA . 3,068 parts In-Stock

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3,068

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DigiPath Technology Company

USA . 1,217 parts In-Stock

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$0.546

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1,217

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$0.546

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Overview

Unlock the power of seamless switching with the SN75466N by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch quality and reliability in every product. Ideal for various applications, this Power Bipolar Junction Transistor offers unparalleled performance and efficiency. Say goodbye to downtime and hello to increased productivity with the SN75466N. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for general purpose switching applications and have high efficiency, making them a versatile choice for a wide range of electronic circuits.

Configuration: COMPLEX

The complex configuration allows for more advanced circuit design and functionality, making this transistor suitable for high-performance applications that require complex signal processing.

Transistor Application: SWITCHING

With a specific application for switching, this transistor is optimized for fast switching speeds and high efficiency, making it ideal for use in power control circuits and other switching applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting on circuit boards and efficient use of space, making it convenient for integration into various electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections to the circuit board and enables easy soldering during assembly, providing a reliable electrical connection for long-term use.

Minimum DC Current Gain (hFE): 1000

Having a minimum DC current gain of 1000 ensures high amplification capabilities, making it suitable for applications requiring significant signal amplification and precision control.

Transistor Element Material: SILICON

Silicon transistors offer high performance, excellent thermal stability, and low leakage current, making them a reliable choice for demanding electronic applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and integration, allowing for multiple connection options to meet specific requirements and optimize performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SN75466N attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T16

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SN75466N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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