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ZTX953STZ

Zetex Plc

ZTX953STZ by Zetex Plc

ZTX953STZ by Zetex Plc is a PNP power BJT transistor with a max VCEsat of 0.33V and a max collector current of 3.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 30 and low collector-emitter voltage (VCE).

Median Price

$0.442

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$0.386

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$0.386

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Verical

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$0.497

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Vyrian

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Nova Conductors

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Aztec Data Supply Inc.

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$0.790

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$0.786

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Corohmni

South Africa . 62 parts In-Stock

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$1.870

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AZTECH Wire

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Overview

Discover the power of ZTX953STZ by Zetex Plc, a leading manufacturer in the industry. This high-quality PNP power bipolar junction transistor is perfect for switching applications. With an impressive maximum VCEsat of just 0.33V and a minimum DC current gain of 30, this transistor offers exceptional performance. Its compact rectangular package, with wire terminals, makes it easy to integrate into any project. Whether you're designing consumer electronics, automotive systems, or industrial equipment, the ZTX953STZ delivers the reliability and efficiency you need. Trust Zetex Plc to provide top-notch products that bring value, benefits, and advantages to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for efficient control of current flow, enabling reliable switching performance.

Configuration: SINGLE

The single configuration simplifies circuit designs and makes installation hassle-free.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers fast and responsive performance.

Maximum VCEsat: 0.33 V

With an extremely low maximum VCEsat of 0.33V, this transistor minimizes power loss and improves overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy mounting and integration into various circuits.

Terminal Form: WIRE

The wire terminals provide a secure and reliable connection, ensuring stable electrical conductivity.

No. of Elements: 1

This transistor has a single element, simplifying circuit design and reducing complexity.

No. of Terminals: 3

The three terminals allow for easy and straightforward integration into circuitry.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and allows for compact and efficient use of space.

Minimum DC Current Gain (hFE): 30

With a minimum DC current gain of 30, this transistor ensures stable and amplified output signals.

Maximum Operating Temperature: 200 °C

The maximum operating temperature of 200°C ensures stable performance even in high-temperature environments.

Maximum Collector-Emitter Voltage: 100 V

With a maximum collector-emitter voltage of 100V, this transistor can handle high voltage levels, increasing its versatility.

Transistor Element Material: SILICON

The silicon transistor element material provides excellent performance and reliability.

Maximum Collector Current (IC): 3.5 A

With a maximum collector current of 3.5A, this transistor can handle high current loads effectively.

Terminal Finish: MATTE TIN

The matte tin terminal finish prevents corrosion and ensures long-lasting connectivity.

Terminal Position: SINGLE

The single terminal position simplifies installation and integration into circuits.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this transistor can withstand various environmental conditions, ensuring reliability.

Maximum Time At Peak Reflow Temperature (s): 10

This transistor can withstand peak reflow temperature for up to 10 seconds, allowing for efficient manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable soldering and manufacturing processes.

Nominal Transition Frequency (fT): 125 MHz

With a nominal transition frequency of 125 MHz, this transistor allows for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX953STZ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Zetex Plc

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.33 V

Trade Compliance

ZTX953STZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

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