Loading...

ZTX951STOA

Diodes Incorporated

ZTX951STOA by Diodes Incorporated

ZTX951STOA by Diodes Inc. is a PNP BJT transistor with hFE of 10, VCE of 60V, and IC of 4A. Ideal for switching applications due to its high transition frequency of 120MHz and single-terminal configuration in an inline package style.

Median Price

$0.552

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 20 parts In-Stock

1+ parts

$0.552

100+ parts

$0.524

1k+ parts

$0.524

10k+ parts

-

20

$0.552

$0.524

$0.524

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Vyrian

USA . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 20 parts In-Stock

1+ parts

$0.469

100+ parts

$0.457

1k+ parts

$0.455

10k+ parts

-

20

$0.469

$0.457

$0.455

-

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.552

100+ parts

$0.524

1k+ parts

$0.524

10k+ parts

-

20

$0.552

$0.524

$0.524

-

Corohmni

South Africa . 27 parts In-Stock

1+ parts

$0.731

100+ parts

-

1k+ parts

-

10k+ parts

-

27

$0.731

-

-

-

Aztec Data Supply Inc.

USA . 3,195 parts In-Stock

1+ parts

$1.018

100+ parts

-

1k+ parts

-

10k+ parts

-

3,195

$1.018

-

-

-

AZTECH Wire

Italy . 231 parts In-Stock

1+ parts

$5.780

100+ parts

-

1k+ parts

-

10k+ parts

-

231

$5.780

-

-

-

Component Stockers USA

USA . 532 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

532

$99.990

-

-

-

Continental Prestige Electronics

USA . 6,391 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,391

-

-

-

-

Argo Parts USA

USA . 809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

809

-

-

-

-

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

Overview

Unlock the power of efficient switching with the ZTX951STOA by Diodes Incorporated. Designed with top-quality materials and advanced technology, this PNP Power BJT transistor offers unparalleled performance and reliability for a wide range of applications. Whether you're looking to optimize your power management system or enhance your electronic devices, this product provides the perfect solution. Experience the benefits of seamless operation, high current capacity, and superior durability with the ZTX951STOA. Upgrade your projects today and discover the difference that Diodes Incorporated can make in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high side switching applications, making this transistor suitable for switching circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to incorporate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and efficient performance in such circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into a variety of electronic devices and circuits.

No. of Terminals: 3

3 terminals provide flexibility in circuit connections and allow for versatile use in different electronic designs.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels in switching applications.

Maximum Collector Current (IC): 4 A

High collector current rating allows for the transistor to handle larger loads and currents in switching circuits.

Nominal Transition Frequency (fT): 120 MHz

High transition frequency enables fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX951STOA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX951STOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20