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ZTX953STOA

Diodes Incorporated

ZTX953STOA by Diodes Incorporated

ZTX953STOA by Diodes Inc. is a PNP BJT transistor with hFE of 30, VCE of 100V, and IC of 3.5A. Ideal for switching applications due to its high transition frequency of 125MHz and single-terminal configuration in an inline package style.

Median Price

$0.633

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

R&J Components

USA . 4,000 parts In-Stock

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4,000

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Bristol Electronics

USA . 1,860 parts In-Stock

1+ parts

-

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$0.633

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$0.439

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1,860

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$0.633

$0.439

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Vyrian

USA . 1,033 parts In-Stock

1+ parts

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1,033

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Nova Conductors

Japan . 32 parts In-Stock

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32

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 377 parts In-Stock

1+ parts

$1.752

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377

$1.752

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Aztec Data Supply Inc.

USA . 2,819 parts In-Stock

1+ parts

$1.907

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2,819

$1.907

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Semicontronic

India . 1,334 parts In-Stock

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$3.050

100+ parts

$2.974

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$2.958

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1,334

$3.050

$2.974

$2.958

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AZTECH Wire

Italy . 884 parts In-Stock

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$18.388

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884

$18.388

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Component Stockers USA

USA . 319 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 15,753 parts In-Stock

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Continental Prestige Electronics

USA . 4,535 parts In-Stock

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4,535

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 1,089 parts In-Stock

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1,089

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Unlock the power of innovation with the ZTX953STOA by Diodes Incorporated, a leading manufacturer known for superior quality and reliability. Ideal for switching applications, this Power Bipolar Junction Transistor (BJT) offers unmatched performance and efficiency. With a maximum collector-emitter voltage of 100V and a nominal transition frequency of 125 MHz, this PNP transistor is designed to meet your needs with precision. Experience seamless operation and optimal functionality with the ZTX953STOA, delivering exceptional value and benefits to customers seeking cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Allows for easy integration with other PNP components in circuit design.

Configuration: SINGLE

Simplified design and easy to use in circuits.

Transistor Application: SWITCHING

Ideal for switching applications due to its high collector current and voltage ratings.

Package Shape: RECTANGULAR

Space-efficient design for compact circuits.

Terminal Form: WIRE

Easy to connect and solder in circuits.

No. of Terminals: 3

Simple and straightforward to integrate into circuits.

Package Style (Meter): IN-LINE

Easy to mount and install in circuits.

Minimum DC Current Gain (hFE): 30

Provides sufficient current gain for reliable performance.

Maximum Collector-Emitter Voltage: 100 V

Can withstand high voltage levels, increasing its versatility.

Transistor Element Material: SILICON

Offers high performance and reliability for various applications.

Maximum Collector Current (IC): 3.5 A

High collector current rating for demanding applications.

Terminal Finish: MATTE TIN

Ensures good conductivity and solderability.

Terminal Position: SINGLE

Simplified installation and connection in circuits.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency for fast switching speed.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX953STOA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX953STOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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