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ZTX957STZ

Diodes Incorporated

ZTX957STZ by Diodes Incorporated

ZTX957STZ by Diodes Incorporated is a PNP BJT transistor with max. VCE of 300V, IC of 1A, and hFE of 90. Ideal for switching applications due to its high transition frequency of 85MHz and single-terminal configuration in an inline package style. Made from silicon material with matte tin finish for efficient performance at peak reflow temp of 260°C within 30s.

Median Price

$0.497

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 6,000 parts In-Stock

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$0.497

Avnet

USA . 2,000 parts In-Stock

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2,000

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Vyrian

USA . 3,700 parts In-Stock

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3,700

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NAC Semi

USA . 2,000 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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QUARKTWIN TECHNOLOGY LTD

USA . 20,945 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,948 parts In-Stock

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Argo Parts USA

USA . 3,032 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Eastek

USA . 2,000 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Overview

Enhance your electronic projects with the ZTX957STZ from Diodes Incorporated. This high-quality Power BJT offers unparalleled performance in switching applications, providing a reliable and efficient solution for your circuit needs. Manufactured by the industry-leading Diodes Incorporated, this PNP transistor delivers exceptional value with its single configuration and impressive hFE of 90. Whether you're designing power supplies, motor controls, or audio amplifiers, the ZTX957STZ's 300V maximum collector-emitter voltage and 1A maximum collector current make it the ideal choice for your next project. Upgrade your designs today with the ZTX957STZ and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good insulation and thermal conductivity, making the transistor durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product suitable for various types of switching circuits.

Configuration: SINGLE

Single configuration simplifies the circuit design and installation process, making it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient power management and control in electronic devices.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement within circuit boards, optimizing space usage in electronic designs.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration into circuits, simplifying installation and maintenance.

Maximum Collector-Emitter Voltage: 300 V

High collector-emitter voltage rating ensures reliable performance and protection against voltage spikes in high-power applications.

Maximum Collector Current (IC): 1 A

Capable of handling up to 1 ampere of current, making it suitable for a wide range of small to medium power applications.

Nominal Transition Frequency (fT): 85 MHz

High transition frequency enables fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX957STZ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX957STZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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