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ZTX949

Diodes Incorporated

ZTX949 by Diodes Incorporated

ZTX949 by Diodes Inc. is a PNP BJT transistor with hFE of 100, VCE of 30V, and IC of 4.5A. Ideal for power applications in electronics due to its high current capacity and temperature range up to 200°C. Its silicon element material ensures reliable performance in various circuit configurations.

Median Price

$1.525

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 3,860 parts In-Stock

1+ parts

$1.187

100+ parts

$0.759

1k+ parts

$0.601

10k+ parts

-

3,860

$1.187

$0.759

$0.601

-

Farnell

UK . 3,780 parts In-Stock

1+ parts

$1.280

100+ parts

$0.617

1k+ parts

$0.400

10k+ parts

-

3,780

$1.280

$0.617

$0.400

-

DigiKey

USA . 4,052 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.545

10k+ parts

$0.444

4,052

$1.770

$0.755

$0.545

$0.444

Mouser Electronics

USA . 3,344 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.546

10k+ parts

$0.443

3,344

$1.770

$0.755

$0.546

$0.443

Newark

USA . 3,772 parts In-Stock

1+ parts

$1.820

100+ parts

$0.778

1k+ parts

$0.562

10k+ parts

-

3,772

$1.820

$0.778

$0.562

-

Verical

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.497

28,000

-

-

-

$0.497

Avnet

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 100 parts In-Stock

1+ parts

$2.500

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$2.500

-

-

-

DF Sales Co.

USA . 100 parts In-Stock

1+ parts

$2.500

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$2.500

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,780

-

-

-

-

NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Bristol Electronics

USA . 794 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

794

-

-

-

-

R&J Components

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

LittleDiode

UK . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,933 parts In-Stock

1+ parts

$1.120

100+ parts

$0.684

1k+ parts

$0.411

10k+ parts

-

3,933

$1.120

$0.684

$0.411

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.410

100+ parts

$1.283

1k+ parts

$1.156

10k+ parts

-

40

$1.410

$1.283

$1.156

-

Microchip USA

USA . 9,923 parts In-Stock

1+ parts

$7.605

100+ parts

-

1k+ parts

-

10k+ parts

-

9,923

$7.605

-

-

-

Lixinc

USA . 7,146 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,146

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Eastek

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Perfect Parts

USA . 1,444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,444

-

-

-

-

Overview

Elevate your electronic projects with the ZTX949 by Diodes Incorporated. As a leading manufacturer of Power Bipolar Junction Transistors (BJT), Diodes Incorporated delivers top-notch quality and reliability. The ZTX949, with its PNP configuration and excellent DC current gain, is perfect for a wide range of applications. From amplifiers to power supplies, this transistor offers unmatched performance and efficiency. Trust in Diodes Incorporated to provide innovative solutions that meet your needs. Experience the difference with the ZTX949 - where quality meets value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures high durability and resistance to environmental factors, making it ideal for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs, providing versatility and compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to implement in electronic devices.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, saving space and allowing for efficient placement on circuit boards.

Minimum DC Current Gain (hFE): 100

The high minimum DC current gain ensures reliable and consistent performance in amplification applications, delivering high signal fidelity.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperatures, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating of 30V allows for handling higher voltages safely, expanding the range of potential applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures superior performance and reliability, as silicon is known for its excellent semiconductor properties.

Maximum Collector Current (IC): 4.5 A

The high maximum collector current rating of 4.5A enables the transistor to handle large current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency of 100MHz, this transistor is capable of fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX949 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX949 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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