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ZTX949STZ

Diodes Incorporated

ZTX949STZ by Diodes Incorporated

ZTX949STZ by Diodes Inc. is a PNP BJT transistor with hFE of 75, VCE of 30V, and IC of 4.5A. Ideal for switching applications due to its silicon element material and high transition frequency of 100MHz. Packaged in plastic/epoxy with wire terminals, it's suitable for various electronic designs requiring single configuration transistors.

Median Price

$1.125

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,890 parts In-Stock

1+ parts

$1.080

100+ parts

$0.463

1k+ parts

$0.335

10k+ parts

-

1,890

$1.080

$0.463

$0.335

-

Element14

Singapore . 1,890 parts In-Stock

1+ parts

$1.125

100+ parts

$0.715

1k+ parts

$0.560

10k+ parts

-

1,890

$1.125

$0.715

$0.560

-

Mouser Electronics

USA . 1,998 parts In-Stock

1+ parts

$1.610

100+ parts

$0.631

1k+ parts

$0.488

10k+ parts

$0.447

1,998

$1.610

$0.631

$0.488

$0.447

Newark

USA . 1,911 parts In-Stock

1+ parts

$1.660

100+ parts

$0.698

1k+ parts

$0.502

10k+ parts

-

1,911

$1.660

$0.698

$0.502

-

Verical

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.434

20,000

-

-

-

$0.434

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.493

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.493

-

-

-

Chip Stock

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66,000

-

-

-

-

Vyrian

USA . 2,197 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,197

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 2,237 parts In-Stock

1+ parts

$0.330

100+ parts

$0.322

1k+ parts

$0.320

10k+ parts

-

2,237

$0.330

$0.322

$0.320

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.483

100+ parts

-

1k+ parts

$0.464

10k+ parts

-

50

$0.483

-

$0.464

-

Argo Parts USA

USA . 4,447 parts In-Stock

1+ parts

$0.493

100+ parts

-

1k+ parts

-

10k+ parts

$0.478

4,447

$0.493

-

-

$0.478

Aztec Data Supply Inc.

USA . 1,650 parts In-Stock

1+ parts

$0.779

100+ parts

-

1k+ parts

-

10k+ parts

-

1,650

$0.779

-

-

-

Continental Prestige Electronics

USA . 1,890 parts In-Stock

1+ parts

$1.070

100+ parts

$0.657

1k+ parts

$0.390

10k+ parts

-

1,890

$1.070

$0.657

$0.390

-

Corohmni

South Africa . 520 parts In-Stock

1+ parts

$1.149

100+ parts

-

1k+ parts

-

10k+ parts

-

520

$1.149

-

-

-

Overview

Elevate your electronics with the ZTX949STZ from Diodes Incorporated, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) offers exceptional quality and reliability, making it ideal for various switching applications. With a maximum Collector-Emitter Voltage of 30V and a DC Current Gain of 75, this PNP transistor delivers superior performance. Upgrade your projects with the ZTX949STZ and experience the value and benefits that only Diodes Incorporated can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good durability and is resistant to heat, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-power amplification and switching applications, offering versatility and efficiency.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures ease of use in various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers excellent performance and reliability in controlling electrical signals.

Minimum DC Current Gain (hFE): 75

The high minimum DC current gain ensures efficient amplification of input signals, providing reliable and stable performance.

Maximum Collector-Emitter Voltage: 30 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels without breakdown, ensuring robust operation.

Maximum Collector Current (IC): 4.5 A

The high maximum collector current allows for handling larger current loads, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency indicates the speed at which the transistor can switch between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX949STZ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX949STZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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