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MJL1302AG

Onsemi

MJL1302AG by Onsemi

The Onsemi MJL1302AG is a PNP power BJT with 200W max power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications, it has a min hFE of 45 and operates up to 150°C. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

Median Price

$4.835

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 16 parts In-Stock

1+ parts

$4.440

100+ parts

$2.280

1k+ parts

$2.220

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16

$4.440

$2.280

$2.220

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Farnell

UK . 1,593 parts In-Stock

1+ parts

$5.230

100+ parts

$2.110

1k+ parts

$2.030

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1,593

$5.230

$2.110

$2.030

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RS (Exports)

UK . 11 parts In-Stock

1+ parts

$5.637

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11

$5.637

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Mouser Electronics

USA . 2,915 parts In-Stock

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$5.960

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2,915

$5.960

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DigiKey

USA . 770 parts In-Stock

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$5.960

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$2.877

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$2.319

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770

$5.960

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$2.319

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Newark

USA . 308 parts In-Stock

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$6.140

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$2.970

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$2.470

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308

$6.140

$2.970

$2.470

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Element14

Singapore . 1,593 parts In-Stock

1+ parts

$8.470

100+ parts

$4.790

1k+ parts

$3.640

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1,593

$8.470

$4.790

$3.640

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Future Electronics

Canada . 1,688 parts In-Stock

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$3.500

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$3.380

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$3.500

$3.380

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Master Electronics

USA . 1,227 parts In-Stock

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$2.830

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$2.260

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$2.230

1,227

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$2.830

$2.260

$2.230

Arrow

USA . 1,225 parts In-Stock

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$2.473

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$2.473

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Verical

USA . 1,225 parts In-Stock

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$3.329

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$2.659

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1,225

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$3.329

$2.659

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Flip Electronics (Authorized)

USA . 1,000 parts In-Stock

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EBV Elektronik

Germany . 200 parts In-Stock

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200

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Rochester

USA . 25 parts In-Stock

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$2.110

1k+ parts

$1.890

10k+ parts

$1.780

25

-

$2.110

$1.890

$1.780

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,339 parts In-Stock

1+ parts

$2.290

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1,339

$2.290

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Nova Conductors

Japan . 150 parts In-Stock

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$2.899

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150

$2.899

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Bristol Electronics

USA . 800 parts In-Stock

1+ parts

$3.876

100+ parts

$1.822

1k+ parts

$1.667

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800

$3.876

$1.822

$1.667

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TME

Poland . 97 parts In-Stock

1+ parts

$5.670

100+ parts

$4.290

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97

$5.670

$4.290

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Chip Stock

USA . 3,020 parts In-Stock

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IBS Electronics

USA . 2,090 parts In-Stock

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$3.436

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$3.001

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2,090

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$3.436

$3.001

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NAC Semi

USA . 1,350 parts In-Stock

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$7.200

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$6.550

1,350

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$6.550

DigiKey Marketplace

USA . 1,200 parts In-Stock

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Vyrian

USA . 872 parts In-Stock

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872

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Flip Electronics

USA . 100 parts In-Stock

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100

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Connector Distribution Corp

USA . 65 parts In-Stock

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65

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Right Parts Inc.

USA . 65 parts In-Stock

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65

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Velocity Electronics

USA . 12 parts In-Stock

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Cyclops Electronics Ltd

UK . 1 parts In-Stock

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1

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,240 parts In-Stock

1+ parts

$1.480

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$1.480

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Modulus Dynamics

Lithuania . 9,943 parts In-Stock

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$1.877

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$1.877

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$1.877

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9,943

$1.877

$1.877

$1.877

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Corphita

USA . 511 parts In-Stock

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$2.169

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511

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Corohmni

South Africa . 203 parts In-Stock

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$2.340

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203

$2.340

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Continental Prestige Electronics

USA . 44 parts In-Stock

1+ parts

$2.640

100+ parts

$1.950

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44

$2.640

$1.950

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Argo Parts USA

USA . 2,788 parts In-Stock

1+ parts

$2.899

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2,788

$2.899

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Netroflash

USA . 100 parts In-Stock

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$2.899

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$2.899

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Ampacity Inc.

Singapore . 974 parts In-Stock

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$3.740

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974

$3.740

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iodParts Technologies Inc.

India . 30 parts In-Stock

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$4.510

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30

$4.510

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AZTECH Wire

Italy . 872 parts In-Stock

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$20.790

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872

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Perfect Parts

USA . 147,581 parts In-Stock

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147,581

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Authorized Procurement Solutions

USA . 20,155 parts In-Stock

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GreenTree Electronics

Israel . 12,105 parts In-Stock

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Microchip USA

USA . 9,233 parts In-Stock

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Kulean Microsystems

USA . 8,184 parts In-Stock

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TANS Electronics

Latvia . 7,781 parts In-Stock

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Problanco Electronics

Mexico . 7,178 parts In-Stock

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Lixinc

USA . 4,126 parts In-Stock

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SupplyDigital Components

Austria . 739 parts In-Stock

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UHIMA Technologies

Türkiye . 670 parts In-Stock

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Kepictronics

USA . 270 parts In-Stock

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Eastek

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Assy Fe

Spain . 11 parts In-Stock

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Overview

Unleash the power of innovation with the MJL1302AG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like the MJL1302AG that are designed for high-performance applications. Ideal for amplifiers, this PNP transistor offers a maximum collector current of 15 A and a minimum DC current gain of 45, ensuring reliability and efficiency in every use. With a maximum power dissipation of 200 W and a maximum operating temperature of 150°C, this transistor is built to withstand even the most demanding conditions. Trust Onsemi to provide you with cutting-edge technology that brings value, benefits, and advantages to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the transistor from external damage, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into circuits requiring PNP transistors, expanding its compatibility.

Configuration: SINGLE

Simplifies circuit design and installation, making it easier to use in amplifier applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement of the transistor in a circuit or on a PCB.

Maximum Power Dissipation (Abs): 200 W

Can handle high power levels, making it suitable for applications with higher power requirements.

Maximum Collector-Emitter Voltage: 260 V

Can withstand high voltage levels, increasing its versatility in different circuit configurations.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, making it suitable for power amplifier applications.

Nominal Transition Frequency (fT): 30 MHz

Provides high frequency response, making it ideal for amplifier applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL1302AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

45

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL1302AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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