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MJL16218

Onsemi

MJL16218 by Onsemi

The Onsemi MJL16218 is a NPN BJT transistor with 650V VCEO, 15A IC, and 170W Ptot. Ideal for switching applications, it has a hFE of 4 and operates up to 125 °C. The package is through-hole with PLASTIC/EPOXY body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 2,398 parts In-Stock

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Digiode

USA . 241 parts In-Stock

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Resion

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ComSIT Distribution GmbH

Germany . 25 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 8,252 parts In-Stock

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Problanco Electronics

Mexico . 7,556 parts In-Stock

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TANS Electronics

Latvia . 6,688 parts In-Stock

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Corphita

USA . 1,070 parts In-Stock

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UHIMA Technologies

Türkiye . 468 parts In-Stock

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Corohmni

South Africa . 142 parts In-Stock

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Kulean Microsystems

USA . 105 parts In-Stock

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Overview

Discover the MJL16218 by Onsemi, a top-quality Power BJT transistor designed for switching applications. With its NPN configuration and impressive specs, this transistor offers reliable performance and efficiency. Manufactured by Onsemi, a trusted leader in semiconductor technology, you can trust in the durability and precision of this product. Whether you're working on industrial equipment or automotive systems, the MJL16218 provides the power and reliability you need. Upgrade your projects with the MJL16218 and experience the benefits of high-quality components from a reputable manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor durable and resistant to environmental factors, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this product versatile and suitable for a wide range of electronic designs.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in different electronic circuits, making it ideal for power control applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this transistor can withstand elevated temperatures without compromising its performance, ensuring reliability in harsh operating conditions.

Maximum Collector-Emitter Voltage: 650 V

The high maximum collector-emitter voltage rating of 650 V allows this transistor to handle high voltage applications, making it suitable for power electronics and industrial control systems.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor can handle high current loads, making it suitable for power switching applications that require large current capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL16218 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Minimum DC Current Gain (hFE):

4

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL16218 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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