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MJL1302A

Onsemi

MJL1302A by Onsemi

The Onsemi MJL1302A is a PNP BJT transistor with 200W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material.

Median Price

$6.150

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 1 parts In-Stock

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$6.150

100+ parts

$4.620

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$4.000

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USA . 3,140 parts In-Stock

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Vyrian

USA . 1,898 parts In-Stock

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Digiode

USA . 1,465 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 44 parts In-Stock

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Bristol Electronics

USA . 29 parts In-Stock

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Electronics Depot

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A&K Electronics

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Rotakorn

Sweden . 4 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 4,573 parts In-Stock

1+ parts

$2.890

100+ parts

$2.740

1k+ parts

$2.650

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4,573

$2.890

$2.740

$2.650

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 8,318 parts In-Stock

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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TANS Electronics

Latvia . 5,181 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,337 parts In-Stock

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Problanco Electronics

Mexico . 1,350 parts In-Stock

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SupplyDigital Components

Austria . 951 parts In-Stock

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Corphita

USA . 938 parts In-Stock

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RC Electronics

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UHIMA Technologies

Türkiye . 625 parts In-Stock

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Corohmni

South Africa . 147 parts In-Stock

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Assy Fe

Spain . 3 parts In-Stock

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Overview

Unleash the power of innovation with the MJL1302A by Onsemi, a high-quality Power Bipolar Junction Transistor designed for amplifiers. Manufactured by Onsemi, a trusted leader in semiconductor technology, this PNP transistor offers reliable performance and durability. Ideal for a wide range of applications, this transistor provides a maximum power dissipation of 200W and a maximum collector-emitter voltage of 260V. Experience the value and benefits of the MJL1302A, where quality meets functionality for your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring reliable performance over time.

Polarity or Channel Type: PNP

Suitable for use in circuits where a PNP transistor is required, offering flexibility in design.

Configuration: SINGLE

Simplified design with a single transistor configuration, making it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: RECTANGULAR

Space-efficient rectangular shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide sturdy connections for stable operation in various circuit configurations.

No. of Terminals: 3

Simple 3-terminal design for easy installation and integration into circuits.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability ensures the transistor can handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure attachment and efficient heat dissipation, enhancing overall performance.

Minimum DC Current Gain (hFE): 45

High current gain ensures efficient amplification of signals, contributing to the transistor's performance.

Maximum Operating Temperature: 150 °C

Withstands high temperatures for reliable operation in a variety of environments.

Maximum Collector-Emitter Voltage: 260 V

High voltage tolerance allows for use in circuits with varying voltage requirements.

Transistor Element Material: SILICON

Silicon material ensures stable and reliable performance in the transistor element.

Maximum Collector Current (IC): 15 A

High collector current rating enables the transistor to handle heavy current loads.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides reliable connections and enhances solderability.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces complexity in circuit design.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents interference in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient assembly and soldering processes with a quick reflow time.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance ensures reliable soldering and assembly.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for fast switching speeds and efficient signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL1302A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

45

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL1302A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-568-3201, 5961015683201

NIIN

015683201

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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