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D45C12G

Onsemi

D45C12G by Onsemi

D45C12G by Onsemi is a PNP BJT transistor with 80V VCEO, 4A IC, and 30W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.619

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,643 parts In-Stock

1+ parts

-

100+ parts

$0.608

1k+ parts

$0.504

10k+ parts

$0.450

1,643

-

$0.608

$0.504

$0.450

Verical

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

$0.562

1,600

-

-

$0.630

$0.562

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,131 parts In-Stock

1+ parts

$0.473

100+ parts

-

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2,131

$0.473

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Vyrian

USA . 7,031 parts In-Stock

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7,031

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J2 Sourcing AB

Sweden . 4,951 parts In-Stock

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4,951

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Distributors (Availability)

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Corphita

USA . 2,300 parts In-Stock

1+ parts

$0.448

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-

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2,300

$0.448

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Corohmni

South Africa . 219 parts In-Stock

1+ parts

$0.498

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219

$0.498

-

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Northwest PG Solutions

USA . 1,372 parts In-Stock

1+ parts

$2.651

100+ parts

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1,372

$2.651

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AZTECH Wire

Italy . 1,005 parts In-Stock

1+ parts

$10.230

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1,005

$10.230

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Problanco Electronics

Mexico . 4,672 parts In-Stock

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4,672

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SupplyDigital Components

Austria . 4,165 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,030 parts In-Stock

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4,030

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Kulean Microsystems

USA . 3,214 parts In-Stock

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Continental Prestige Electronics

USA . 1,643 parts In-Stock

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$0.450

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1,643

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$0.450

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UHIMA Technologies

Türkiye . 544 parts In-Stock

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544

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Native Components

USA . 414 parts In-Stock

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$2.338

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414

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$2.338

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TANS Electronics

Latvia . 129 parts In-Stock

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129

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Overview

Unleash the power of innovation with the D45C12G by Onsemi, a top-of-the-line Power Bipolar Junction Transistor designed for switching applications. With its superior quality and cutting-edge technology, Onsemi has once again raised the bar in the industry. This PNP transistor offers unmatched performance, reliability, and efficiency, making it the ideal choice for your electronic projects. Whether you're a hobbyist or a seasoned professional, the D45C12G delivers exceptional value and benefits that will take your designs to the next level. Upgrade your circuits today and experience the difference with Onsemi's D45C12G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties, making it safe to use in various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and offer faster switching speeds.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

Compact design allows for space-saving installation in electronic devices.

Maximum Power Dissipation (Abs): 30 W

Can handle high power levels, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 20

Provides good amplification of current signal, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

Capable of handling high voltage levels, making it versatile in various circuit designs.

Transistor Element Material: SILICON

Silicon offers good thermal and electrical properties, ensuring stable operation.

Maximum Collector Current (IC): 4 A

Can handle high current levels, suitable for power applications.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Nominal Transition Frequency (fT): 40 MHz

Capable of high-frequency signal switching, ideal for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45C12G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45C12G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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