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D45CBG

Onsemi

D45CBG by Onsemi

The Onsemi D45CBG is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 4A, and min. DC current gain of 20. Ideal for switching applications, it operates at up to 150 °C and has a transition frequency of 40MHz in a flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,565 parts In-Stock

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Digiode

USA . 187 parts In-Stock

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187

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Native Components

USA . 965 parts In-Stock

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$155.216

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$149.008

965

$155.216

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$149.008

Northwest PG Solutions

USA . 1,677 parts In-Stock

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$170.738

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TANS Electronics

Latvia . 6,879 parts In-Stock

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Problanco Electronics

Mexico . 5,587 parts In-Stock

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SupplyDigital Components

Austria . 4,976 parts In-Stock

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Kulean Microsystems

USA . 4,459 parts In-Stock

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UHIMA Technologies

Türkiye . 603 parts In-Stock

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Corphita

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Corohmni

South Africa . 301 parts In-Stock

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Overview

Elevate your power control with the D45CBG by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled quality and performance in a compact package. Ideal for switching applications, this PNP transistor boasts a high collector current and operating temperature, ensuring reliable and efficient operation. Experience seamless functionality and enhanced power management with the D45CBG, a must-have for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits and can handle higher current compared to NPN transistors.

Configuration: SINGLE

Simplified design and easier to handle, suitable for simple switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in turning on/off circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, allowing for use in demanding environments without overheating.

Maximum Collector-Emitter Voltage: 80 V

Can handle high voltage levels, making it suitable for applications that require higher voltage ratings.

Maximum Collector Current (IC): 4 A

Capable of handling relatively high currents, suitable for applications that require higher current ratings.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CBG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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