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D45C

Onsemi

D45C by Onsemi

D45C by Onsemi is a PNP BJT transistor with 80V VCE, 4A IC, and 30W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. Its through-hole package with flange mount style makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 1,892 parts In-Stock

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Vyrian

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ECAB

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Manoshevitz Elec. Sales

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Legend Electronics Inc.

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Northwest PG Solutions

USA . 1,589 parts In-Stock

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SupplyDigital Components

Austria . 8,262 parts In-Stock

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Problanco Electronics

Mexico . 8,036 parts In-Stock

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TANS Electronics

Latvia . 3,394 parts In-Stock

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Corphita

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 744 parts In-Stock

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Native Components

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Overview

Unleash the power of innovation with the D45C by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by the trusted name in the industry, Onsemi, this PNP transistor offers unmatched reliability and performance. With a maximum power dissipation of 30W and a maximum collector-emitter voltage of 80V, the D45C provides exceptional value and benefits to customers looking for a reliable solution. Whether you're in need of a transistor for your next project or application, trust the D45C to deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and fast response in electronic circuits.

Maximum Power Dissipation (Abs): 30 W

Capable of handling high power dissipation, making it suitable for applications requiring power amplification.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 80 V

Can withstand high collector-emitter voltages, providing flexibility in circuit design.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, suitable for applications requiring high power switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

6105-14-276-9987, 6105142769987, 6105-14-276-9988, 6105142769988

NIIN

142769987, 142769988

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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