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D45CBD

Onsemi

D45CBD by Onsemi

D45CBD by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 4A, and min. DC current gain of 20. It is used for switching applications in electronics due to its single configuration and silicon element material, operating up to 150 °C with a transition frequency of 40MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,141 parts In-Stock

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Digiode

USA . 674 parts In-Stock

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Northwest PG Solutions

USA . 333 parts In-Stock

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SupplyDigital Components

Austria . 7,383 parts In-Stock

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Kulean Microsystems

USA . 6,219 parts In-Stock

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Problanco Electronics

Mexico . 6,117 parts In-Stock

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TANS Electronics

Latvia . 4,844 parts In-Stock

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Corphita

USA . 1,870 parts In-Stock

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UHIMA Technologies

Türkiye . 883 parts In-Stock

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Native Components

USA . 507 parts In-Stock

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Corohmni

South Africa . 396 parts In-Stock

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Overview

Elevate your power management solutions with the D45CBD by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor is designed to deliver exceptional performance in switching applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 4A, this PNP transistor offers superior efficiency and reliability. Whether you're looking to optimize your industrial equipment or enhance your electronic designs, the D45CBD provides the perfect balance of power and versatility. Upgrade your projects today and experience the difference with Onsemi's top-notch technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor components, ensuring durability and longevity.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering flexibility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

Easily integrates into circuit designs with its rectangular shape.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure mounting on circuit boards through holes.

No. of Terminals: 3

Simple connection setup with only 3 terminals.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting on surfaces with the flange mount style.

Minimum DC Current Gain (hFE): 20

Provides consistent and reliable amplification of current.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in various environments.

Maximum Collector-Emitter Voltage: 80 V

Can handle higher voltage levels without breakdown, offering versatility in circuit applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents without overheating.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for secure connections.

Terminal Position: SINGLE

Simplified connection setup with a single terminal position.

Case Connection: COLLECTOR

Easy access to the collector terminal for efficient circuit connections.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency for fast switching speeds in applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CBD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CBD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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