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D45CBA

Onsemi

D45CBA by Onsemi

D45CBA by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 4A. It has a min. DC current gain of 20, suitable for switching applications at up to 150 °C operating temperature. The through-hole package style with flange mount is ideal for single terminal connection in various electronic circuits.

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1k+

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Vyrian

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Digiode

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Kulean Microsystems

USA . 5,506 parts In-Stock

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TANS Electronics

Latvia . 4,589 parts In-Stock

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Problanco Electronics

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Northwest PG Solutions

USA . 2,067 parts In-Stock

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Corphita

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SupplyDigital Components

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Native Components

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UHIMA Technologies

Türkiye . 233 parts In-Stock

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Overview

Looking for high-quality power bipolar junction transistors? Look no further than the D45CBA by Onsemi. With a strong reputation for excellence, Onsemi delivers reliable products that meet the demands of various applications. The D45CBA is a PNP transistor ideal for switching purposes, offering a maximum collector-emitter voltage of 80V and a maximum collector current of 4A. Its versatility and durability make it a valuable choice for customers seeking efficient solutions for their projects. Choose the D45CBA and experience the benefits of superior performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: PNP

The PNP polarity or channel type allows for easy integration into circuits where PNP transistors are required.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to manage connections.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and reliable performance in switching circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures and operate reliably in various environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V allows for use in applications that require higher voltage handling capabilities.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, this transistor can handle high current applications effectively.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency of 40 MHz ensures fast response and switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CBA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CBA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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