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D45CBU

Onsemi

D45CBU by Onsemi

D45CBU by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 4A. It has a min. DC current gain of 20, ideal for switching applications at up to 150 °C operating temperature in through-hole package style (flange mount).

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,468 parts In-Stock

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Vyrian

USA . 1,666 parts In-Stock

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Native Components

USA . 774 parts In-Stock

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$0.091

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$0.087

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Northwest PG Solutions

USA . 965 parts In-Stock

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$0.088

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TANS Electronics

Latvia . 7,194 parts In-Stock

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Corphita

USA . 2,302 parts In-Stock

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Problanco Electronics

Mexico . 1,673 parts In-Stock

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SupplyDigital Components

Austria . 1,472 parts In-Stock

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UHIMA Technologies

Türkiye . 946 parts In-Stock

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Kulean Microsystems

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Corohmni

South Africa . 379 parts In-Stock

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Overview

Unlock the power of efficient switching with the D45CBU by Onsemi. Crafted by a trusted manufacturer, this Power Bipolar Junction Transistor offers reliability and performance in a compact package. Ideal for various applications, this PNP transistor provides seamless switching capabilities with a maximum collector-emitter voltage of 80V and a maximum current of 4A. Experience the quality and value that Onsemi brings to the table with the D45CBU, offering customers enhanced functionality and peace of mind in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching applications, offering high switching speeds and efficiency.

Configuration: SINGLE

Singular configuration simplifies circuit design and ensures easy integration into electronic systems.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in controlling electrical power.

Package Shape: RECTANGULAR

Rectangular shape facilitates efficient placement and mounting on circuit boards, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering during assembly.

No. of Terminals: 3

Three terminals enable connections for proper functioning within electronic circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers stable mechanical support and heat dissipation for enhanced performance.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures reliable amplification and signal control capabilities.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures up to 150 °C, suitable for demanding industrial and automotive applications.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage of 80V allows for handling of higher voltages in various circuit designs.

Transistor Element Material: SILICON

Silicon material ensures high performance, low power consumption, and long-term reliability for the transistor.

Maximum Collector Current (IC): 4 A

Capable of handling maximum collector current of 4A, suitable for power switching applications requiring higher current loads.

Terminal Finish: TIN LEAD

Tin lead finish on terminals provides corrosion resistance and facilitates soldering for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures correct orientation during assembly.

Case Connection: COLLECTOR

Collector case connection offers efficient thermal dissipation and electrical isolation for improved transistor performance.

Nominal Transition Frequency (fT): 40 MHz

High nominal transition frequency of 40MHz enables fast switching speeds and high-frequency performance in signal processing applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CBU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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