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D45CDW

Onsemi

D45CDW by Onsemi

D45CDW by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 4A, and min. DC current gain of 20. It is used for switching applications due to its single configuration and rectangular package shape with through-hole terminals. Operating at up to 150 °C, it offers a nominal transition frequency of 40MHz for efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,952 parts In-Stock

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Digiode

USA . 1,546 parts In-Stock

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1,546

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Distributors (Availability)

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Native Components

USA . 608 parts In-Stock

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$0.102

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$0.098

608

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$0.098

Northwest PG Solutions

USA . 624 parts In-Stock

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$0.112

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$0.099

624

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$0.099

Problanco Electronics

Mexico . 6,850 parts In-Stock

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6,850

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Kulean Microsystems

USA . 2,990 parts In-Stock

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2,990

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Corphita

USA . 1,113 parts In-Stock

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TANS Electronics

Latvia . 941 parts In-Stock

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941

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SupplyDigital Components

Austria . 682 parts In-Stock

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UHIMA Technologies

Türkiye . 541 parts In-Stock

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Corohmni

South Africa . 398 parts In-Stock

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Overview

Experience unparalleled quality and performance with the D45CDW Power Bipolar Junction Transistor from Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch products that excel in applications like switching. The D45CDW offers customers reliability, efficiency, and versatility with its PNP configuration and high collector current. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the D45CDW and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and mechanical strength, making the transistor less susceptible to damage during handling or operation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, which can be beneficial for certain circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, making it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing faster response times and improved efficiency in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement and soldering on a PCB, optimizing space usage and facilitating assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer a secure connection to the circuit board, ensuring reliability and stability in the overall system.

No. of Terminals: 3

Having 3 terminals allows for simple and straightforward connections in a circuit, reducing the likelihood of wiring errors.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides additional mechanical support and heat dissipation, enhancing the overall durability and performance of the transistor.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures consistent and reliable amplification of current in the circuit, improving the overall performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, making it suitable for a variety of applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V allows the transistor to handle higher voltages without breakdown, increasing its versatility in power applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance, ensuring the transistor operates efficiently and effectively.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, this transistor can handle high currents, making it suitable for power switching applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability, ensuring a strong and reliable connection between the transistor and the circuit board.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and reduces the chances of wiring errors, making the transistor easier to work with.

Case Connection: COLLECTOR

Having the case connection at the collector simplifies the circuit design and improves heat dissipation, enhancing the overall performance of the transistor.

Nominal Transition Frequency (fT): 40 MHz

With a nominal transition frequency of 40 MHz, this transistor can switch signals at high speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CDW attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CDW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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