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D45C12

Onsemi

D45C12 by Onsemi

D45C12 by Onsemi is a PNP BJT transistor with 80V VCE, 4A IC, and 30W power dissipation. Ideal for switching applications, it has a hFE of 20 and operates up to 140 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.292

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,250 parts In-Stock

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-

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$0.304

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$0.252

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$0.225

4,250

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$0.304

$0.252

$0.225

Verical

USA . 4,250 parts In-Stock

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$0.281

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$0.281

Distributors (In-Stock)

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Digiode

USA . 2,378 parts In-Stock

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$0.237

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$0.237

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Vyrian

USA . 2,188 parts In-Stock

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$0.249

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DigiKey Marketplace

USA . 4,250 parts In-Stock

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Anansix

USA . 2,461 parts In-Stock

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PUI

USA . 755 parts In-Stock

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755

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Component Electronics Inc.

Canada . 20 parts In-Stock

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20

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MISTER SPROCKETS

USA . 1 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 697 parts In-Stock

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$0.224

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$0.224

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Corohmni

South Africa . 399 parts In-Stock

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$0.249

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Component Stockers USA

USA . 6,081 parts In-Stock

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$0.260

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$0.240

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$0.220

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6,081

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Native Components

USA . 294 parts In-Stock

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$5.321

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294

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QUARKTWIN TECHNOLOGY LTD

USA . 12,886 parts In-Stock

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TANS Electronics

Latvia . 8,400 parts In-Stock

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Kulean Microsystems

USA . 4,644 parts In-Stock

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Continental Prestige Electronics

USA . 4,250 parts In-Stock

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$0.225

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Problanco Electronics

Mexico . 2,660 parts In-Stock

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SupplyDigital Components

Austria . 2,508 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Northwest PG Solutions

USA . 1,930 parts In-Stock

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Supply Digital

USA . 1,683 parts In-Stock

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UHIMA Technologies

Türkiye . 367 parts In-Stock

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Overview

Experience reliable and efficient power management with the D45C12 by Onsemi. Crafted by a trusted manufacturer in the industry, this Power Bipolar Junction Transistor (BJT) provides superior performance in various applications such as switching. With its PNP polarity, single configuration, and 30W maximum power dissipation, this transistor offers exceptional value and benefits to customers seeking high-quality components for their projects. Trust in Onsemi and elevate your electronics with the D45C12.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for various switching purposes.

Configuration: SINGLE

The single configuration simplifies the circuit design and installation process, making it more convenient for users.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers efficient and reliable performance in switching circuits.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation of 30W, this transistor can handle high power loads without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80V allows this transistor to be used in applications requiring higher voltage levels.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, this transistor can handle high current loads, making it suitable for various applications.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency of 40MHz indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45C12 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45C12 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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