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D45CBC

Onsemi

D45CBC by Onsemi

D45CBC by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 4A. It has a min. DC current gain of 20, suitable for switching applications at up to 150 °C operating temperature. The package style is flange mount with through-hole terminals, ideal for high-frequency switching circuits up to 40MHz.

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2

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1k+

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Digiode

USA . 1,924 parts In-Stock

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Vyrian

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Native Components

USA . 321 parts In-Stock

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Northwest PG Solutions

USA . 525 parts In-Stock

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Kulean Microsystems

USA . 7,327 parts In-Stock

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Problanco Electronics

Mexico . 4,824 parts In-Stock

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TANS Electronics

Latvia . 1,170 parts In-Stock

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Corphita

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Corohmni

South Africa . 413 parts In-Stock

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UHIMA Technologies

Türkiye . 380 parts In-Stock

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SupplyDigital Components

Austria . 178 parts In-Stock

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Overview

Enhance your power management solutions with the D45CBC by Onsemi. Manufactured with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled quality and reliability. Ideal for switching applications, this PNP transistor provides a seamless performance with a maximum collector-emitter voltage of 80V and a collector current of 4A. Its flange mount package shape ensures easy installation while its high DC current gain guarantees efficiency. Elevate your projects with the D45CBC and experience the benefits of superior performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are convenient for controlling multiple components in a circuit, making this transistor versatile for switching applications.

Configuration: SINGLE

A single configuration simplifies circuit design and ensures easy integration into electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and fast switching speeds.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on circuit boards, saving space and optimizing layout design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making soldering easier and ensuring secure placement on the PCB.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and allows for straightforward circuit implementation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and ease of mounting, ensuring secure installation in various applications.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor offers consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V ensures compatibility with a variety of circuits and power supply requirements.

Transistor Element Material: SILICON

Silicon material in the transistor element provides enhanced performance and reliability, making it suitable for demanding applications.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, this transistor can handle high-power loads and switching requirements with ease.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers good solderability and ensures a strong electrical connection, improving overall reliability.

Terminal Position: SINGLE

A single terminal position simplifies circuit connection and ensures proper alignment during installation.

Case Connection: COLLECTOR

The case connection at the collector terminal provides a secure and stable connection point for external components in the circuit.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency of 40MHz indicates fast response times and efficient signal processing capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CBC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CBC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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