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D45C8

Onsemi

D45C8 by Onsemi

The Onsemi D45C8 is a PNP BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 4A. Ideal for amplifier applications, it has a min DC current gain of 20 (hFE) and nominal transition frequency of 32MHz. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$4.700

Lifecycle Status

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24

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1k+

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American Microsemiconductor Inc.

USA . 4,193 parts In-Stock

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Tech-Mark Corp

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Vyrian

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Nova Conductors

Japan . 750 parts In-Stock

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ABC Electronics Ltd.

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Digiode

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Holdelec - ElecDif-Pro

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Extreme Components

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Prism Electronics

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SPM Sales

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Huijzer Components

Netherlands . 139 parts In-Stock

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Inventory MP

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Bristol Electronics

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DigiKey Marketplace

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PC Components Company LLC

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MISTER SPROCKETS

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Electronic Expediters

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Halfin

Belgium . 25 parts In-Stock

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Sunrise Surplus Inc.

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ACDS - Activité Composants Distribution Service

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Corel Iberica Componentes, S.L.

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Electronics Depot

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LittleDiode

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Corohmni

South Africa . 287 parts In-Stock

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AZTECH Wire

Italy . 638 parts In-Stock

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Ampacity Inc.

Singapore . 1,647 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

Germany . 6,743 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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Alle Elektronik GmbH

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Supply Digital

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SupplyDigital Components

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Corphita

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Perfect Parts

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UHIMA Technologies

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Metaverse IC Inc.

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Bastille Electronics

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Component Stockers USA

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Cyclops Electronics Ltd (Excess)

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Overview

Elevate your power management with the D45C8 by Onsemi, a top-of-the-line Power Bipolar Junction Transistor. Manufactured with precision and expertise, this PNP transistor offers unmatched reliability and performance for amplifier applications. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 20, this transistor ensures optimal power efficiency and seamless operation. Upgrade your electronic devices with the D45C8 and experience superior quality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are needed, offering versatility in circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Minimum DC Current Gain (hFE): 20

Ensures a consistent and reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 60 V

Allows for the handling of high voltage levels, making the transistor suitable for various applications.

Maximum Collector Current (IC): 4 A

Capable of handling high levels of current, making it suitable for power applications.

Nominal Transition Frequency (fT): 32 MHz

Provides a high frequency response, making the transistor suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45C8 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45C8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-042-6896, 5961010426896

NIIN

010426896

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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