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D45CAS

Onsemi

D45CAS by Onsemi

D45CAS by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 4A, and min. DC current gain of 20. Ideal for switching applications, it operates at up to 150 °C and has a transition frequency of 40MHz in a flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,403 parts In-Stock

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Digiode

USA . 187 parts In-Stock

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Native Components

USA . 548 parts In-Stock

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$6.610

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548

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TANS Electronics

Latvia . 6,445 parts In-Stock

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SupplyDigital Components

Austria . 2,971 parts In-Stock

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Problanco Electronics

Mexico . 1,215 parts In-Stock

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Corphita

USA . 1,162 parts In-Stock

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Kulean Microsystems

USA . 973 parts In-Stock

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Corohmni

South Africa . 353 parts In-Stock

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UHIMA Technologies

Türkiye . 312 parts In-Stock

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Northwest PG Solutions

USA . 160 parts In-Stock

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Overview

Unlock the power of innovation with the D45CAS by Onsemi. Designed with precision and quality in mind, this Power BJT offers unparalleled performance and reliability for all your switching needs. From its PNP configuration to its high collector current capability, this transistor is a game-changer in the industry. Whether you're looking to enhance your electronics projects or streamline your manufacturing processes, the D45CAS delivers value, efficiency, and peace of mind. Trust in Onsemi's expertise and experience to take your applications to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and insulation properties, ensuring durability and safety.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications, making this product suitable for switching purposes.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: RECTANGULAR

Compact rectangular shape allows for easy placement and mounting in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection in circuit boards.

No. of Terminals: 3

Three terminals allow for necessary connections in a switching circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy installation and secure mounting.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures efficient amplification and switching capabilities.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 80 V

Handles high collector-emitter voltages, allowing for versatile use in different circuits.

Transistor Element Material: SILICON

Silicon-based transistor element offers good performance and reliability.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high currents in switching applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliability in connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and layout design.

Case Connection: COLLECTOR

Collector case connection facilitates easy integration into circuit designs.

Nominal Transition Frequency (fT): 40 MHz

High frequency capability allows for fast switching in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CAS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CAS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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