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D45CAK

Onsemi

D45CAK by Onsemi

D45CAK by Onsemi is a PNP BJT transistor with 80V VCEO, 4A IC, and 40MHz fT. Ideal for switching applications, it has a single configuration in a plastic/epoxy package with through-hole terminals. Operating up to 150 °C, it offers a min hFE of 20 and collector connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,240 parts In-Stock

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Vyrian

USA . 838 parts In-Stock

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838

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Native Components

USA . 98 parts In-Stock

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$10.750

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98

$10.750

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Northwest PG Solutions

USA . 1,506 parts In-Stock

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$11.825

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$10.642

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1,506

$11.825

$10.642

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SupplyDigital Components

Austria . 7,106 parts In-Stock

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Problanco Electronics

Mexico . 1,273 parts In-Stock

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1,273

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UHIMA Technologies

Türkiye . 974 parts In-Stock

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974

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Kulean Microsystems

USA . 886 parts In-Stock

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Corphita

USA . 436 parts In-Stock

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TANS Electronics

Latvia . 161 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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Overview

Enhance the power of your electronic devices with the D45CAK by Onsemi, a top-tier Power BJT transistor that guarantees exceptional performance and reliability. Designed with precision and expertise by Onsemi, a renowned manufacturer in the industry, this PNP transistor is perfect for switching applications. With its robust construction and high-quality materials, the D45CAK ensures seamless operation and optimal functionality. Say goodbye to technical glitches and hello to smooth operations with this single-configured transistor. Upgrade your devices now with the D45CAK and experience a whole new level of efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good protection for the transistor, ensuring durability and longevity.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor ideal for various switching tasks.

Configuration: SINGLE

The single configuration simplifies the design and implementation of circuits using this transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in such scenarios.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and connect the transistor to a circuit board.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand high temperatures without compromising performance.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency of 40 MHz ensures fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CAK attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CAK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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