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D45CAN

Onsemi

D45CAN by Onsemi

D45CAN by Onsemi is a PNP Power BJT with 80V VCE, 4A IC, and 40MHz fT. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, this transistor offers a min hFE of 20 and is suitable for flange mount installations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,127 parts In-Stock

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Digiode

USA . 1,253 parts In-Stock

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Problanco Electronics

Mexico . 6,020 parts In-Stock

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Kulean Microsystems

USA . 5,328 parts In-Stock

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SupplyDigital Components

Austria . 3,055 parts In-Stock

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TANS Electronics

Latvia . 2,546 parts In-Stock

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Northwest PG Solutions

USA . 2,176 parts In-Stock

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UHIMA Technologies

Türkiye . 848 parts In-Stock

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Native Components

USA . 660 parts In-Stock

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Corohmni

South Africa . 398 parts In-Stock

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Corphita

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Overview

Unleash the power of innovation with the D45CAN Power Bipolar Junction Transistor from Onsemi. Designed for superior performance and reliability, this PNP transistor is perfect for a wide range of switching applications. With its high DC current gain and maximum collector-emitter voltage of 80V, you can trust this transistor to deliver outstanding results every time. Experience the quality and precision that only Onsemi can provide and take your projects to new heights with the D45CAN.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high side switching applications, making this transistor suitable for a wide range of switching purposes.

Configuration: SINGLE

Single configuration transistors are easier to use and integrate into circuits, making this product user-friendly for designers and engineers.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient operation in switching circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and placement on PCBs, improving the overall design and layout of electronic systems.

No. of Terminals: 3

Having 3 terminals simplifies the connection and use of the transistor in circuits, reducing complexity and potential errors in wiring.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, ensuring reliable operation in demanding environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum voltage rating allows for use in circuits with higher voltage requirements, expanding the range of applications for this transistor.

Maximum Collector Current (IC): 4 A

The high collector current rating enables this transistor to handle high currents without overheating, making it suitable for power switching applications.

Nominal Transition Frequency (fT): 40 MHz

The high transition frequency indicates fast switching speeds, making this transistor ideal for high-frequency switching applications where speed is crucial.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CAN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CAN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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