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D45C11

Onsemi

D45C11 by Onsemi

D45C11 by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 32MHz fT. Ideal for switching applications, it has a max power dissipation of 60W. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.521

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Rochester

USA . 2,031 parts In-Stock

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-

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$0.462

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$0.384

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$0.342

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$0.462

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DigiKey

USA . 2,031 parts In-Stock

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$0.580

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Digiode

USA . 2,200 parts In-Stock

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$0.360

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Vyrian

USA . 2,414 parts In-Stock

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DigiKey Marketplace

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Anansix

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ACDS - Activité Composants Distribution Service

France . 900 parts In-Stock

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Bristol Electronics

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900

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PUI

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Semi Source

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Resion

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R&J Components

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MISTER SPROCKETS

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Manoshevitz Elec. Sales

Israel . 25 parts In-Stock

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Inland Empire Components Inc.

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Sunrise Surplus Inc.

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Corphita

USA . 2,948 parts In-Stock

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$0.341

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Corohmni

South Africa . 204 parts In-Stock

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$0.379

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Native Components

USA . 611 parts In-Stock

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$1.685

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Northwest PG Solutions

USA . 1,758 parts In-Stock

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$1.853

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QUARKTWIN TECHNOLOGY LTD

USA . 21,656 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,160 parts In-Stock

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SupplyDigital Components

Austria . 4,815 parts In-Stock

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Kulean Microsystems

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Supply Digital

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,440 parts In-Stock

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Metaverse IC Inc.

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Perfect Parts

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Problanco Electronics

Mexico . 1,571 parts In-Stock

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TANS Electronics

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UHIMA Technologies

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Assy Fe

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Overview

Unlock the power of innovation with the D45C11 by Onsemi, a top-quality Power BJT transistor designed for switching applications. Manufactured with precision and expertise by Onsemi, this PNP transistor offers unmatched performance and reliability. Whether you're looking to optimize your circuit design or enhance your electronics projects, the D45C11 is the perfect solution. Experience the value and benefits of this product firsthand and take your projects to new heights. Trust Onsemi for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high power and switching applications, making this transistor versatile and useful.

Configuration: SINGLE

Single configuration simplifies circuit design and integration of the transistor into electronic devices.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and effective performance in this specific function.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement within electronic systems.

Maximum Power Dissipation (Abs): 60 W

High power dissipation capability ensures that the transistor can handle a range of power levels and operate effectively in different conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides a secure and stable mounting option for the transistor in various applications.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures amplification of current within the circuit, enhancing the transistor's performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to function reliably in elevated temperature environments.

Maximum Collector-Emitter Voltage: 60 V

60V maximum collector-emitter voltage rating provides a wide voltage tolerance for the transistor's operation.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability, making the transistor a durable and high-performance component.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, the transistor can handle high current loads in various applications.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and solderability, facilitating easy and secure connections in circuitry.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and installation of the transistor in electronic systems.

Nominal Transition Frequency (fT): 32 MHz

High nominal transition frequency of 32MHz indicates the speed at which the transistor can switch between on and off states, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45C11 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45C11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-110-3360, 5961011103360, 5961-01-439-7003, 5961014397003

NIIN

011103360, 014397003

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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