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D45CAF

Onsemi

D45CAF by Onsemi

The Onsemi D45CAF is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 4A, and min. DC current gain of 20. Ideal for switching applications, it operates at up to 150 °C and has a transition frequency of 40MHz in a flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 576 parts In-Stock

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Digiode

USA . 396 parts In-Stock

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SupplyDigital Components

Austria . 7,936 parts In-Stock

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Problanco Electronics

Mexico . 7,230 parts In-Stock

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TANS Electronics

Latvia . 6,826 parts In-Stock

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Kulean Microsystems

USA . 5,362 parts In-Stock

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Corphita

USA . 2,377 parts In-Stock

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Northwest PG Solutions

USA . 1,712 parts In-Stock

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Native Components

USA . 221 parts In-Stock

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UHIMA Technologies

Türkiye . 110 parts In-Stock

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Corohmni

South Africa . 82 parts In-Stock

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Overview

The D45CAF by Onsemi is a top-notch Power Bipolar Junction Transistor designed for switching applications. Manufactured with high-quality materials and expertise by Onsemi, this PNP transistor offers exceptional performance and reliability. Its flange mount package and single configuration make it easy to integrate into various electronic devices. With a maximum collector-emitter voltage of 80V and a maximum collector current of 4A, the D45CAF provides customers with a valuable solution for their power management needs. Upgrade your electronic projects with the D45CAF and experience the benefits of superior quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good heat dissipation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: PNP

Suitable for applications where PNP type transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design by having a single transistor in the package, reducing component count and board space.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation and reliable performance.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring higher voltage switching capabilities, providing versatility in circuit design.

Maximum Collector Current (IC): 4 A

Capable of handling higher currents, making it suitable for applications that require higher power switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) D45CAF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

D45CAF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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