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2N6667G

Onsemi

2N6667G by Onsemi

2N6667G by Onsemi is a PNP BJT with 10A IC, 60V VCE, and 2W power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates up to 150 °C with hFE of at least 100, making it suitable for high-power tasks.

Median Price

$1.116

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 315 parts In-Stock

1+ parts

$0.550

100+ parts

$0.540

1k+ parts

$0.530

10k+ parts

-

315

$0.550

$0.540

$0.530

-

Newark

USA . 251 parts In-Stock

1+ parts

$0.922

100+ parts

$0.623

1k+ parts

$0.455

10k+ parts

-

251

$0.922

$0.623

$0.455

-

Element14

Singapore . 251 parts In-Stock

1+ parts

$1.310

100+ parts

$0.852

1k+ parts

$0.595

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-

251

$1.310

$0.852

$0.595

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DigiKey

USA . 74 parts In-Stock

1+ parts

-

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$9.000

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74

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$9.000

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Flip Electronics (Authorized)

USA . 74 parts In-Stock

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74

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Digiode

USA . 2,264 parts In-Stock

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$0.522

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-

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2,264

$0.522

-

-

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TME

Poland . 921 parts In-Stock

1+ parts

$0.760

100+ parts

$0.450

1k+ parts

$0.400

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921

$0.760

$0.450

$0.400

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Vyrian

USA . 8,922 parts In-Stock

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-

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8,922

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Bristol Electronics

USA . 116 parts In-Stock

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116

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Flip Electronics

USA . 74 parts In-Stock

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74

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Prism Electronics

USA . 70 parts In-Stock

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70

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Distributors (Availability)

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Ampacity Inc.

Singapore . 39 parts In-Stock

1+ parts

$0.468

100+ parts

-

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39

$0.468

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Corphita

USA . 2,043 parts In-Stock

1+ parts

$0.495

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-

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2,043

$0.495

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Corohmni

South Africa . 145 parts In-Stock

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$0.550

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-

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145

$0.550

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Continental Prestige Electronics

USA . 251 parts In-Stock

1+ parts

$0.680

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-

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251

$0.680

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Native Components

USA . 222 parts In-Stock

1+ parts

$1.192

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222

$1.192

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Northwest PG Solutions

USA . 552 parts In-Stock

1+ parts

$1.312

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552

$1.312

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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SupplyDigital Components

Austria . 6,323 parts In-Stock

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6,323

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A-Z Elektronik GmbH

Germany . 5,114 parts In-Stock

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5,114

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Kulean Microsystems

USA . 4,469 parts In-Stock

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4,469

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TANS Electronics

Latvia . 4,050 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Perfect Parts

USA . 1,800 parts In-Stock

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1,800

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UHIMA Technologies

Türkiye . 403 parts In-Stock

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403

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Kepictronics

USA . 400 parts In-Stock

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400

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Problanco Electronics

Mexico . 58 parts In-Stock

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58

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Overview

Upgrade your amplifier with the high-quality 2N6667G Power Bipolar Junction Transistor from Onsemi. Designed with a Darlington configuration, built-in diode, and resistor, this PNP transistor offers unmatched performance and reliability. With a maximum collector-emitter voltage of 60V and a maximum collector current of 10A, this transistor is ideal for a wide range of amplifier applications. Trust Onsemi's reputation for excellence and invest in the 2N6667G for superior sound quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation, durability, and heat dissipation, making the transistor more reliable and efficient.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, while the built-in diode and resistor offer additional functionality in the circuit.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring optimal performance in amplification applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in various electronic devices or circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables easy mounting on a flat surface, increasing convenience in installation.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures accurate and consistent amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to operate reliably in various environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating offers protection and reliability in high-voltage applications.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability compared to other materials in transistor fabrication.

Maximum Collector Current (IC): 10 A

High collector current rating allows the transistor to handle large currents, suitable for power-related applications.

Terminal Finish: TIN

Tin finish on the terminals provides corrosion resistance and good electrical conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, making it easier to integrate the transistor into the circuit.

Case Connection: COLLECTOR

Collector case connection ensures proper thermal dissipation and grounding for efficient operation of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6667G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6667G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-158-4449, 5961011584449

NIIN

011584449

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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