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2N6667BS

Onsemi

2N6667BS by Onsemi

The Onsemi 2N6667BS is a PNP power BJT with a Darlington configuration, ideal for amplifier applications. It offers a min hFE of 100, max temp of 150 °C, and max VCE of 60V. With a collector current up to 10A, it features through-hole terminals in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,845 parts In-Stock

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1,845

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Digiode

USA . 1,720 parts In-Stock

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1,720

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 861 parts In-Stock

1+ parts

$0.458

100+ parts

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$0.440

861

$0.458

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$0.440

Northwest PG Solutions

USA . 261 parts In-Stock

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$0.504

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$0.444

261

$0.504

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$0.444

SupplyDigital Components

Austria . 6,592 parts In-Stock

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6,592

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TANS Electronics

Latvia . 3,507 parts In-Stock

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3,507

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Problanco Electronics

Mexico . 3,026 parts In-Stock

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3,026

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Kulean Microsystems

USA . 2,793 parts In-Stock

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2,793

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Corphita

USA . 1,692 parts In-Stock

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1,692

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UHIMA Technologies

Türkiye . 726 parts In-Stock

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726

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Corohmni

South Africa . 338 parts In-Stock

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Overview

Discover the power of the 2N6667BS by Onsemi, a high-quality Power Bipolar Junction Transistor designed for amplifier applications. With its Darlington configuration and built-in diode and resistor, this PNP transistor offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this product ensures top-notch quality and precision. Experience the benefits of this transistor's high DC current gain, maximum operating temperature of 150 °C, and maximum collector-emitter voltage of 60V. Upgrade your amplification projects with the 2N6667BS and unleash its superior capabilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability, ensuring reliable performance of the transistor.

Polarity or Channel Type: PNP

Suitable for various amplifier applications and electronic circuits where PNP transistors are required.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor add convenience in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimized performance in amplification circuits.

Package Shape: RECTANGULAR

Compact rectangular shape allows for easy installation and space-saving on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, making the transistor easy to solder onto PCBs.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits and connections to external components.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure attachment to heat sinks or chassis, ensuring efficient heat dissipation.

Minimum DC Current Gain (hFE): 100

High minimum current gain ensures consistent and stable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 60 V

Handles moderate voltage levels, suitable for most amplifier circuits and electronic applications.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics, such as high conductivity and efficiency in amplification.

Maximum Collector Current (IC): 10 A

High collector current rating allows for high power handling capability in various electronic circuits and amplifier designs.

Terminal Finish: TIN LEAD

Tin lead finish facilitates easy soldering and provides good electrical conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and component layout, ensuring straightforward integration into circuits.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation and ease of mounting in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6667BS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6667BS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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