Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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2N6667AS by Onsemi is a PNP power BJT with a min hFE of 100, max VCE of 60V, and max IC of 10A. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates up to 150 °C, making it suitable for high-temperature environments.
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Provides good insulation for safer operation and protection of internal components.
Suitable for applications where PNP transistors are required, allowing for specific circuit design and functionality.
Saves space and simplifies design with integrated components, providing convenience for circuit designers.
Designed for amplification applications, ensuring optimal performance in audio or signal amplification circuits.
Easily mountable and fits well within circuit layouts, enhancing installation flexibility.
Provides strong mechanical connection for reliable performance and ease of soldering during assembly.
Simplifies circuit connections and reduces the risk of wiring errors.
Allows for secure mounting in place, ensuring stability and consistent performance over time.
Ensures consistent and reliable amplification of signals with high efficiency.
Capable of operating in high temperature environments without compromising performance, suitable for industrial applications.
Provides a high voltage threshold for reliable operation in various circuits without risk of breakdown.
Offers high performance and durability, ensuring long-term reliability in circuit applications.
Supports high current applications with efficient power handling capabilities, suitable for demanding circuit requirements.
Provides good conductivity and solderability, ensuring secure and lasting electrical connections.
Simplifies circuit design and connection, reducing the risk of errors during assembly.
Clear indication of connection point for easy integration within circuits, facilitating circuit design and troubleshooting.
Power Bipolar Junction Transistors (BJT) 2N6667AS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
2N6667AS Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148
Synsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MMBT3904LT1G
Onsemi
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358AN
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SMBJ18CA
Taiwan Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
1N4148WT
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
MBRA160T3G
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
OPA2277UA/2K5E4
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
2N7002
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
MC7805CTG
MC7805CTG by Onsemi is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation. The package style is flange mount with through-hole terminals, ensuring easy installation and reliability in diverse electronic designs.
SN65HVD234DR
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
NDT2955
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
Intersil
Vishay Intertechnology
Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.
LM2931Z-5.0RPG
LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MJD340T4
Motorola
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;
MJD44H11T4
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
BD14016STU
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Transistor Element Material: SILICON;
BD139.10
BD139.10 by Motorola is a NPN power BJT with 3 terminals and max. power dissipation of 8W. It is ideal for switching applications, offering a max. collector-emitter voltage of 80V and max. collector current of 1.5A, with a min DC current gain of 63 (hFE).
TIP36C
Comset Semiconductors
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
D44H11
Micro Commercial Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A; Terminal Finish: TIN LEAD;
TIP50
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 400 V; No. of Elements: 1;
MJE340
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Collector Current (IC): .5 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BUV48A
Bourns
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 15 A; Peak Reflow Temperature (C): NOT SPECIFIED;
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
TIP32C
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP125
PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
2N3055
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG;
TIP111G
TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
TIP42A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJD117T4
STMicroelectronics
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
BD139
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP127G
TIP127G by Onsemi is a PNP Power BJT with 100V VCEO, 5A IC, and 65W Ptot. It features a Darlington configuration for amplifier applications. The transistor has a min hFE of 1000 and operates up to 150°C, making it suitable for high-power amplification needs.
TIP110
Transys Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
2N3055 by Texas Instruments is a NPN BJT transistor with 60V VCE, 15A IC, and 115W power dissipation. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 200°C with a transition frequency of 2.5MHz.
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2N6668
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 26 W; Maximum Collector Current (IC): 10 A;
2N6667BC
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3; No. of Elements: 1;
2N6609G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 16 A;
2N6667DW
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE; No. of Terminals: 3;
2N6667BG
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Terminal Form: THROUGH-HOLE; Transistor Application: AMPLIFIER;
2N6667AU
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; JESD-609 Code: e0; Terminal Position: SINGLE;
2N6667BA
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3;
2N6609
2N6667BD
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
2N6667AK
2N6667BV
2N6667BS
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Qualification: Not Qualified; No. of Terminals: 3;
2N6667G
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
2N6667AF
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
2N6668AF
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
2N6667AJ
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
2N6667
2N6667AN
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR; Package Shape: RECTANGULAR;
2N6667BU
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 60 V;
2N6667-DR6280
Harris Semiconductor
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
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