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2N6668AF

Onsemi

2N6668AF by Onsemi

The Onsemi 2N6668AF is a PNP power BJT with a Darlington configuration, ideal for amplifier applications. It offers a min DC current gain of 100 (hFE), max collector-emitter voltage of 80V, and max collector current of 10A. The transistor element material is silicon, and it features a through-hole terminal form with tin lead finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,153 parts In-Stock

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Digiode

USA . 232 parts In-Stock

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Native Components

USA . 331 parts In-Stock

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$1.036

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331

$1.036

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Northwest PG Solutions

USA . 267 parts In-Stock

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$1.140

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TANS Electronics

Latvia . 4,394 parts In-Stock

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SupplyDigital Components

Austria . 4,393 parts In-Stock

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Kulean Microsystems

USA . 1,662 parts In-Stock

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Problanco Electronics

Mexico . 1,644 parts In-Stock

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Corphita

USA . 1,180 parts In-Stock

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UHIMA Technologies

Türkiye . 931 parts In-Stock

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Corohmni

South Africa . 357 parts In-Stock

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Overview

Unlock the power of innovation with the 2N6668AF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) that are designed to amplify signals with precision and reliability. Ideal for amplifier applications, this PNP transistor boasts a Darlington configuration with a built-in diode and resistor for enhanced performance. With a maximum collector-emitter voltage of 80V and a maximum collector current of 10A, this transistor offers exceptional value and benefits to customers seeking high-quality components for their projects. Experience the difference with Onsemi's 2N6668AF - where quality meets innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides robust protection for the internal components, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offers compatibility with a wide range of circuits and systems.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by incorporating additional components, saving time and effort in setup.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in audio or signal processing applications.

Package Shape: RECTANGULAR

Easily mountable and fits well into various circuit layouts, enhancing versatility and compatibility.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and installation on PCBs, making it user-friendly for assembly.

No. of Terminals: 3

Simple interface with external components, reducing complexity in connection setup.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation, enhancing the transistor's overall performance and longevity.

Minimum DC Current Gain (hFE): 100

Ensures consistent and reliable amplification, delivering stable output signals for various applications.

Maximum Collector-Emitter Voltage: 80 V

Handles high voltage levels safely, making it suitable for a wide range of power supply and signal processing tasks.

Transistor Element Material: SILICON

Provides efficient performance and temperature resistance, ensuring reliable operation in various environmental conditions.

Maximum Collector Current (IC): 10 A

Capable of handling high current loads, making it suitable for power amplification and control applications.

Terminal Finish: TIN LEAD

Ensures good conductivity and corrosion resistance, enhancing the transistor's overall reliability and performance.

Terminal Position: SINGLE

Simplifies connection setup and reduces the risk of errors, ensuring proper functionality in the circuit.

Case Connection: COLLECTOR

Clearly defines the terminal function, making it easier to integrate into circuit designs and troubleshoot if needed.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6668AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6668AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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