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2N6667

Onsemi

2N6667 by Onsemi

2N6667 by Onsemi is a PNP BJT with 26W power dissipation, 60V max. collector-emitter voltage, and 10A max. collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates at up to 150 °C temperature, featuring a min hFE of 100 and fT of 20MHz.

Median Price

$1.490

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

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Rochester

USA . 34 parts In-Stock

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$0.210

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Newark

USA . 499 parts In-Stock

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$2.770

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$1.600

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$1.240

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$1.090

499

$2.770

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$1.090

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Digiode

USA . 2,064 parts In-Stock

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Component Electronics Inc.

Canada . 56 parts In-Stock

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$0.770

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$0.580

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$0.500

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56

$0.770

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TEDSS.com

USA . 205 parts In-Stock

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$1.000

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$0.340

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American Microsemiconductor Inc.

USA . 18 parts In-Stock

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$12.200

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Forefront Electronics and Design

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Vyrian

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Anansix

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Prism Electronics

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ComSIT Distribution GmbH

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Resion

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Bristol Electronics

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First Choice Components Inc.

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Mil-Aero Solutions, Inc.

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DF Sales Co.

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LittleDiode

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Electronics Depot

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EMSNET

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Electronic Expediters

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Corphita

USA . 1,669 parts In-Stock

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Corohmni

South Africa . 316 parts In-Stock

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Component Stockers USA

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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TANS Electronics

Latvia . 3,940 parts In-Stock

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Glotronic Ltd.

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Northwest PG Solutions

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Kulean Microsystems

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Montclair Electronics, Inc.

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Overview

Boost your amplification capabilities with the 2N6667 by Onsemi! Manufactured by a trusted industry leader, this Power Bipolar Junction Transistor (BJT) offers top-notch quality and reliability. Ideal for amplifier applications, this PNP transistor features a DARLINGTON configuration with a built-in diode and resistor, providing unmatched performance. With a maximum power dissipation of 26W and a maximum collector current of 10A, this transistor delivers exceptional results while maintaining operational temperatures up to 150 °C. Upgrade your electronics today with the 2N6667 and experience superior amplification like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes this transistor lightweight and durable, ideal for applications where weight and reliability are important.

Polarity or Channel Type: PNP

The PNP type allows for easy compatibility with other components in circuits, making it versatile for various amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and reduces the need for additional components, saving space and cost.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Maximum Power Dissipation (Abs): 26 W

With a high power dissipation capability of 26W, this transistor can handle demanding amplifier applications without overheating.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60V allows for use in a wide range of amplifier circuits without the risk of breakdown.

Maximum Collector Current (IC): 10 A

With a high maximum collector current of 10A, this transistor can handle large current loads in amplifier circuits with ease.

Nominal Transition Frequency (fT): 20 MHz

The high nominal transition frequency of 20MHz ensures fast switching speeds and high-frequency performance in amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6667 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6667 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-158-4449, 5961011584449

NIIN

011584449

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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