Loading...

2N6667BC

Onsemi

2N6667BC by Onsemi

Onsemi 2N6667BC is a PNP BJT with Darlington configuration, ideal for amplifier applications. Features include hFE of 100, VCE of 60V, and IC of 10A. Its plastic/epoxy package with through-hole terminals ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,477 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,477

-

-

-

-

Digiode

USA . 1,141 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,141

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 810 parts In-Stock

1+ parts

$77.390

100+ parts

-

1k+ parts

-

10k+ parts

$74.294

810

$77.390

-

-

$74.294

Northwest PG Solutions

USA . 2,067 parts In-Stock

1+ parts

$85.129

100+ parts

-

1k+ parts

-

10k+ parts

-

2,067

$85.129

-

-

-

Problanco Electronics

Mexico . 6,952 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,952

-

-

-

-

Kulean Microsystems

USA . 1,303 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,303

-

-

-

-

Corphita

USA . 1,207 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,207

-

-

-

-

SupplyDigital Components

Austria . 1,062 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,062

-

-

-

-

TANS Electronics

Latvia . 1,037 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,037

-

-

-

-

UHIMA Technologies

Türkiye . 631 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

631

-

-

-

-

Corohmni

South Africa . 123 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

123

-

-

-

-

Overview

Upgrade your amplifier with the high-quality 2N6667BC Power Bipolar Junction Transistor by Onsemi. With a built-in diode and resistor, this PNP transistor offers exceptional performance and reliability for your audio applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor ensures top-notch quality and durability. Experience seamless amplification with the 2N6667BC, designed to deliver superior sound output while maximizing efficiency. Say goodbye to subpar performance and elevate your audio experience with the 2N6667BC from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in amplifiers and signal processing circuits, making this transistor ideal for such applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and built-in diode and resistor provide protection and ease of use in amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and fitting in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and ease of soldering, enhancing the overall reliability of the transistor.

No. of Terminals: 3

Three terminals allow for straightforward connection and integration in electronic circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount package style ensures secure mounting and thermal stability in various applications.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and stable amplification capabilities.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating offers ample voltage handling capacity for various applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor in electronic circuits.

Maximum Collector Current (IC): 10 A

High maximum collector current rating allows for handling of high current loads in amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for the terminal connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and integration, making the transistor easy to use.

Case Connection: COLLECTOR

Collector case connection enhances thermal management and overall performance of the transistor in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6667BC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6667BC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20