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2N6667BA

Onsemi

2N6667BA by Onsemi

2N6667BA by Onsemi is a PNP BJT with Darlington configuration, hFE of 100, VCE of 60V, and IC of 10A. Ideal for amplifier applications due to its built-in diode and resistor. Operates up to 150 °C with through-hole terminals in a rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,829 parts In-Stock

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Vyrian

USA . 288 parts In-Stock

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288

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Native Components

USA . 731 parts In-Stock

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$1.808

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731

$1.808

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Northwest PG Solutions

USA . 1,361 parts In-Stock

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$1.988

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Kulean Microsystems

USA . 8,274 parts In-Stock

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TANS Electronics

Latvia . 6,921 parts In-Stock

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SupplyDigital Components

Austria . 2,725 parts In-Stock

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Problanco Electronics

Mexico . 1,315 parts In-Stock

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Corphita

USA . 1,113 parts In-Stock

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UHIMA Technologies

Türkiye . 809 parts In-Stock

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Corohmni

South Africa . 400 parts In-Stock

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Overview

Enhance your amplifier projects with the 2N6667BA Power BJT from Onsemi. Known for their high-quality components, Onsemi delivers reliability and performance in every product. The 2N6667BA is a PNP Darlington transistor with a built-in diode and resistor, making it ideal for amplifier applications. With a maximum collector-emitter voltage of 60V and a maximum collector current of 10A, this transistor offers exceptional value and benefits to customers seeking superior amplification capabilities. Upgrade your projects today with the 2N6667BA from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor components and allows for easy mounting in various electronic devices.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, such as amplifiers and switches.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers enhanced performance and convenience with built-in components, reducing the need for additional external components.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring reliable and efficient amplification of signals.

Package Shape: RECTANGULAR

Easily fits into rectangular or square electronic assemblies, saving space and providing a neat and organized setup.

Terminal Form: THROUGH-HOLE

Allows for efficient soldering and secure mounting on PCBs or through holes in electronic devices.

No. of Terminals: 3

Provides a simple connection setup with minimal terminals, reducing complexity during installation.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and dismounting of the transistor in a flange-style setup, enhancing accessibility.

Minimum DC Current Gain (hFE): 100

Ensures a minimum gain level for reliable signal amplification in amplifier circuits.

Maximum Operating Temperature: 150 °C

Capable of operating in higher temperature environments without compromising performance, ensuring durability.

Maximum Collector-Emitter Voltage: 60 V

Offers a high voltage rating for handling varying voltage levels in electronic circuits, enhancing versatility.

Transistor Element Material: SILICON

Utilizes silicon, a widely used semiconductor material known for its reliability and efficiency in electronic components.

Maximum Collector Current (IC): 10 A

Capable of handling high collector currents, making it suitable for power applications that require high current levels.

Terminal Finish: TIN LEAD

Provides a reliable and durable finish for the terminals, ensuring strong connections and longevity in operation.

Terminal Position: SINGLE

Simplifies the connection setup with a single terminal position, reducing complexity and making installation straightforward.

Case Connection: COLLECTOR

Indicates the collector connection for easy integration into electronic circuits and clear identification of transistor terminals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6667BA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6667BA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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