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2N6609G

Onsemi

2N6609G by Onsemi

2N6609G by Onsemi is a PNP power BJT with max. collector-emitter voltage of 140V, max. collector current of 16A, and max. power dissipation of 150W. Ideal for switching applications due to its single configuration and silicon transistor element material.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,104 parts In-Stock

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Digiode

USA . 524 parts In-Stock

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TANS Electronics

Latvia . 3,440 parts In-Stock

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SupplyDigital Components

Austria . 2,799 parts In-Stock

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Kulean Microsystems

USA . 2,010 parts In-Stock

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Problanco Electronics

Mexico . 1,307 parts In-Stock

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Northwest PG Solutions

USA . 1,253 parts In-Stock

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Corphita

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Corohmni

South Africa . 250 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

The Onsemi 2N6609G Power Bipolar Junction Transistor is a game-changer in the world of switching applications. With its high-quality construction and superior performance, this PNP transistor offers unmatched reliability and efficiency. Manufactured by Onsemi, a trusted name in the industry, this transistor boasts a maximum power dissipation of 150W and a maximum collector current of 16A, making it ideal for a wide range of applications. Whether you're looking to upgrade your electronics or optimize your power management system, the 2N6609G delivers exceptional value and performance that will exceed your expectations. Choose Onsemi for cutting-edge technology and unparalleled quality.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal in the package body provides better thermal conductivity and heat dissipation, making this transistor suitable for high power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile for various switching circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and increases reliability by reducing the chances of mismatched transistors in a multiple configuration setup.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid switching between ON and OFF states efficiently.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various electronic systems.

Maximum Power Dissipation (Abs): 150 W

With a high power dissipation capability, this transistor can handle large amounts of power without overheating, making it reliable for high-power applications.

Maximum Collector-Emitter Voltage: 140 V

The high maximum collector-emitter voltage rating allows this transistor to be used in higher voltage circuits without the risk of breakdown.

Maximum Collector Current (IC): 16 A

The high collector current rating enables this transistor to handle large currents, making it suitable for high-power switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6609G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6609G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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