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2N6667DW

Onsemi

2N6667DW by Onsemi

2N6667DW by Onsemi is a PNP power BJT with a Darlington configuration, ideal for amplifier applications. It features a min hFE of 100, max operating temp of 150 °C, and max VCE of 60V. This transistor has a collector current rating of 10A and comes in a through-hole package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,013 parts In-Stock

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Vyrian

USA . 288 parts In-Stock

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288

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Distributors (Availability)

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Native Components

USA . 978 parts In-Stock

1+ parts

$1,616.400

100+ parts

$1,584.072

1k+ parts

$1,567.908

10k+ parts

$1,551.744

978

$1,616.400

$1,584.072

$1,567.908

$1,551.744

Northwest PG Solutions

USA . 2,326 parts In-Stock

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$1,778.040

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$1,778.040

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Problanco Electronics

Mexico . 7,658 parts In-Stock

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TANS Electronics

Latvia . 6,589 parts In-Stock

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Corphita

USA . 1,213 parts In-Stock

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Kulean Microsystems

USA . 230 parts In-Stock

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SupplyDigital Components

Austria . 88 parts In-Stock

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Overview

Enhance your amplifier designs with the Onsemi 2N6667DW Power Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor with a Darlington configuration offers built-in diode and resistor for seamless integration. With a minimum DC current gain of 100 and maximum collector-emitter voltage of 60V, this transistor ensures optimal performance in various applications. Upgrade your amplifiers today with the high-quality and reliable 2N6667DW from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ensuring the transistor is protected from damage during handling and installation.

Polarity or Channel Type: PNP

PNP polarity allows for easy integration into PNP transistor circuits, providing flexibility in design and implementation.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration with built-in diode and resistor simplifies circuit design and reduces the need for additional components, saving space and cost.

Transistor Application: AMPLIFIER

Designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Package Shape: RECTANGULAR

Rectangular package shape enables easy mounting and positioning on circuit boards, facilitating installation and assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections to the circuit board, enhancing the overall stability and longevity of the transistor.

No. of Terminals: 3

Three terminals allow for simple and straightforward circuit connections, reducing complexity in wiring and minimizing the risk of errors.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy mounting and secure attachment to external devices or heatsinks, improving thermal management and overall performance.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable and reliable amplification of signals, delivering consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows for reliable operation in a wide range of temperature environments, making the transistor suitable for diverse applications.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, this transistor can handle high voltage levels, making it suitable for use in power applications.

Transistor Element Material: SILICON

Silicon material in the transistor element provides high efficiency and performance, ensuring reliable operation and long-lasting functionality.

Maximum Collector Current (IC): 10 A

High maximum collector current of 10A allows for efficient power handling, making the transistor suitable for high-power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides reliable connections and soldering, ensuring secure attachment to the circuit board and long-term stability.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and reduces the risk of errors during installation, enhancing overall ease of use.

Case Connection: COLLECTOR

Collector case connection enables easy integration into circuit layouts, providing flexibility in design and installation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6667DW attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6667DW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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