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2N6609

Onsemi

2N6609 by Onsemi

2N6609 by Onsemi is a PNP BJT transistor with 16A IC, 140V VCE, and 150W power dissipation. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with round shape and bottom terminal position.

Median Price

$5.720

Lifecycle Status

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20

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1k+

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Farnell

UK . 507 parts In-Stock

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$5.720

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$3.180

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$1.590

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507

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Freelance Electronics

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$1.315

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DigiKey Marketplace

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$4.910

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American Microsemiconductor Inc.

USA . 2,139 parts In-Stock

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Digiode

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Speed Components Ltd

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Bristol Electronics

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Electro Mavin

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Inventory MP

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LittleDiode

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MISTER SPROCKETS

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LWI Electronics Inc

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Inland Empire Components Inc.

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Benley Electronics

USA . 2 parts In-Stock

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$0.750

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2

$0.750

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Corohmni

South Africa . 340 parts In-Stock

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$1.315

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Advanced Electronics

New Zealand . 1,149 parts In-Stock

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$1.750

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$1.732

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$1.662

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$1.750

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Component Stockers USA

USA . 3,559 parts In-Stock

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$26.662

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Ampacity Inc.

Singapore . 891 parts In-Stock

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$39.050

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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Kepictronics

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Problanco Electronics

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Authorized Procurement Solutions

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West Coast Incorporated

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Glotronic Ltd.

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Northwest PG Solutions

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Corphita

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UHIMA Technologies

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Epart123

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Metaverse IC Inc.

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Native Components

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RTC Component Inc.

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Overview

Upgrade your power management solutions with the 2N6609 by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers reliable performance in switching applications. With a maximum power dissipation of 150W and a maximum operating temperature of 200 °C, this PNP transistor provides efficient power handling capabilities. From its robust metal package body to its superior silicon element material, Onsemi ensures top-notch quality in every aspect of this product. Trust the 2N6609 for seamless switching operations and enjoy the benefits of enhanced power management in your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better thermal conductivity and durability, allowing for efficient heat dissipation and longer lifespan of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and can handle larger currents, making them suitable for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, enhancing reliability and ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for power management.

Maximum Power Dissipation: 150 W

With a high maximum power dissipation rating, this transistor can handle high power loads without overheating or failing, ensuring reliability in demanding conditions.

Maximum Operating Temperature: 200 °C

The high operating temperature range allows for operation in a wide range of environments, making this transistor suitable for industrial or automotive applications.

Maximum Collector-Emitter Voltage: 140 V

With a high maximum voltage rating, this transistor can handle higher voltages without breakdown or damage, ensuring reliability in various circuit designs.

Nominal Transition Frequency: 4 MHz

The high transition frequency allows for fast response times and high-speed switching, making this transistor suitable for applications requiring high frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6609 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6609 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-107-2016, 5961011072016, 5961-01-131-2440, 5961011312440, 5961-15-103-5494, 5961151035494

NIIN

011072016, 011312440, 151035494

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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