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2N6667BG

Onsemi

2N6667BG by Onsemi

2N6667BG by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features hFE of 100, VCE of 60V, and IC of 10A. With a max operating temperature of 150 °C, it is designed in a rectangular package style with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,472 parts In-Stock

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Digiode

USA . 393 parts In-Stock

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393

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Native Components

USA . 275 parts In-Stock

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$0.253

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$0.243

275

$0.253

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$0.243

Northwest PG Solutions

USA . 1,599 parts In-Stock

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$0.278

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$0.246

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$0.278

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$0.246

Kulean Microsystems

USA . 6,092 parts In-Stock

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Corphita

USA . 2,059 parts In-Stock

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Problanco Electronics

Mexico . 2,053 parts In-Stock

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SupplyDigital Components

Austria . 1,708 parts In-Stock

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UHIMA Technologies

Türkiye . 755 parts In-Stock

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Corohmni

South Africa . 378 parts In-Stock

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TANS Electronics

Latvia . 224 parts In-Stock

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Overview

Upgrade your amplifier with the reliable 2N6667BG power bipolar junction transistor from Onsemi. With a maximum collector-emitter voltage of 60V and a maximum collector current of 10A, this PNP transistor ensures optimal performance in various applications. The Darlington configuration, built-in diode, and resistor make it easy to integrate into circuits, while the high DC current gain of 100 guarantees stable amplification. Trust Onsemi's expertise and quality to deliver exceptional value and reliability to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor components, enhancing durability and reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering compatibility with existing circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated diode and resistor simplify circuit design and reduce the need for additional components, saving space and cost.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring optimal performance and efficiency in audio and signal amplification applications.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient PCB layout and space-saving integration in electronic devices.

Terminal Form: THROUGH-HOLE

Simplifies soldering process and provides secure connection in through-hole PCB assembly, offering reliability in circuit connections.

No. of Terminals: 3

Standard 3-terminal configuration for easy installation and connection in electronic circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure mounting option for stable placement in electronic equipment.

Minimum DC Current Gain (hFE): 100

High current gain ensures efficient amplification and signal processing in applications requiring high gain.

Maximum Operating Temperature: 150 °C

Allows for reliable operation in high temperature environments, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 60 V

Withstands high voltage levels to protect the transistor from overloads and ensure stable performance in various voltage requirements.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for a wide range of electronic applications.

Maximum Collector Current (IC): 10 A

Capable of handling high currents without overheating, providing efficient power management in circuits with high current demands.

Terminal Position: SINGLE

Single terminal position simplifies installation and wiring, ensuring correct connection in electronic circuits.

Case Connection: COLLECTOR

Collector case connection offers secure connection point for efficient heat dissipation and circuit performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6667BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6667BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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