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2N6667AU

Onsemi

2N6667AU by Onsemi

2N6667AU by Onsemi is a PNP BJT with Darlington configuration, ideal for amplifier applications. It offers a min hFE of 100 and can handle up to 10A collector current at 60V. With a max operating temperature of 150 °C, it features a plastic/epoxy package body and tin lead terminal finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,875 parts In-Stock

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1,875

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Vyrian

USA . 1,526 parts In-Stock

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1,526

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 812 parts In-Stock

1+ parts

$15.190

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812

$15.190

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Northwest PG Solutions

USA . 1,516 parts In-Stock

1+ parts

$16.709

100+ parts

$15.038

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1,516

$16.709

$15.038

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Kulean Microsystems

USA . 7,951 parts In-Stock

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7,951

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Problanco Electronics

Mexico . 7,347 parts In-Stock

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7,347

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TANS Electronics

Latvia . 5,842 parts In-Stock

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5,842

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SupplyDigital Components

Austria . 4,238 parts In-Stock

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4,238

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Corphita

USA . 1,579 parts In-Stock

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1,579

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UHIMA Technologies

Türkiye . 749 parts In-Stock

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749

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Corohmni

South Africa . 374 parts In-Stock

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374

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Overview

Elevate your amplifier designs with the Onsemi 2N6667AU Power Bipolar Junction Transistor (BJT). Manufactured by Onsemi, known for superior quality and reliability, this PNP transistor features a Darlington configuration with a built-in diode and resistor, offering unmatched performance. Ideal for amplifier applications, this transistor boasts a high DC current gain of 100 and a maximum collector-emitter voltage of 60V, ensuring optimal functionality. Trust Onsemi to deliver exceptional value and benefits with the 2N6667AU, setting your projects apart from the rest.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Provides insulation for safe operation and protection against environmental factors.

Polarity or Channel Type - PNP

Suitable for applications requiring PNP transistors.

Configuration - DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and reduces component count, saving space and cost.

Transistor Application - AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance.

Package Shape - RECTANGULAR

Easy to mount and integrate into circuit designs.

Terminal Form - THROUGH-HOLE

Allows for easy through-hole soldering and reliable connections.

No. of Terminals - 3

Simplifies connection and circuit layout.

Package Style (Meter) - FLANGE MOUNT

Allows for secure mounting in electronic devices.

Minimum DC Current Gain (hFE) - 100

Ensures consistent amplification performance in various conditions.

Maximum Operating Temperature - 150 °C

Can withstand high operating temperatures without malfunctioning.

Maximum Collector-Emitter Voltage - 60 V

Suitable for applications requiring up to 60V collector-emitter voltage.

Transistor Element Material - SILICON

Provides high reliability and performance for the transistor.

Maximum Collector Current (IC) - 10 A

Capable of handling high collector currents for demanding applications.

Terminal Finish - TIN LEAD

Provides reliable electrical connections and soldering.

Terminal Position - SINGLE

Simplifies connection and circuit layout.

Case Connection - COLLECTOR

Clear indication of case connection for easy circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6667AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6667AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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