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2N6668

Onsemi

2N6668 by Onsemi

The Onsemi 2N6668 is a PNP power BJT with a max collector-emitter voltage of 80V and a max collector current of 10A. It features a min DC current gain of 100, making it suitable for amplifier applications. The transistor has a package style of flange mount and can dissipate up to 26W of power at an operating temperature of 150°C.

Median Price

$1.890

Lifecycle Status

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23

In-Stock Inventory

1k+

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Farnell

UK . 1,407 parts In-Stock

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$1.690

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$0.790

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$0.635

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Newark

USA . 1,262 parts In-Stock

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$1.890

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$0.993

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$0.794

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Element14

Singapore . 1,407 parts In-Stock

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Digiode

USA . 4,801 parts In-Stock

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Vyrian

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DigiKey Marketplace

USA . 791 parts In-Stock

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American Microsemiconductor Inc.

USA . 488 parts In-Stock

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Anansix

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ECAB

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Bristol Electronics

USA . 206 parts In-Stock

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$1.125

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$0.675

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LIBRA Elektronik GmbH

Germany . 130 parts In-Stock

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ES Components

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A2Z Electronics, Inc.

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ZD Integrated Circuits Inc.

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LittleDiode

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DF Sales Co.

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Tech-Mark Corp

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Electronic Expediters

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MISTER SPROCKETS

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Distributors (Availability)

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Component Stockers USA

USA . 4,782 parts In-Stock

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$0.750

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$1.000

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$0.790

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$1.000

$0.790

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IDEA Electronic Components Group

UK . 1,835 parts In-Stock

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$1.148

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$1.033

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Corphita

USA . 3,491 parts In-Stock

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$1.420

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Corohmni

South Africa . 135 parts In-Stock

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MKK Technologies

India . 1,764 parts In-Stock

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DigiPath Technology Company

USA . 1,764 parts In-Stock

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Continental Prestige Electronics

USA . 3,331 parts In-Stock

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$2.570

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$1.430

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$0.804

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Ampacity Inc.

Singapore . 1,944 parts In-Stock

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$3.630

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Native Components

USA . 1,042 parts In-Stock

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$13.160

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Northwest PG Solutions

USA . 3,553 parts In-Stock

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$13.028

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Microchip USA

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Kulean Microsystems

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A-Z Elektronik GmbH

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Problanco Electronics

Mexico . 2,825 parts In-Stock

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Glotronic Ltd.

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SupplyDigital Components

Austria . 2,380 parts In-Stock

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Parana Technologies

USA . 2,161 parts In-Stock

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Supply Digital

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TANS Electronics

Latvia . 824 parts In-Stock

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Perfect Parts

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UHIMA Technologies

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Assy Fe

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Overview

Elevate your amplifier designs with the Onsemi 2N6668 Power BJT. Manufactured by trusted industry leader Onsemi, this PNP transistor offers exceptional quality and reliability. Ideal for amplifier applications, this transistor features a unique Darlington configuration with a built-in diode and resistor, ensuring optimal performance. With a maximum collector-emitter voltage of 80V and a maximum collector current of 10A, the 2N6668 delivers superior power dissipation and efficiency. Upgrade your projects today with the unmatched value and benefits of the Onsemi 2N6668.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and protects the semiconductor device from external factors, ensuring reliability and longevity

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Saves space on the circuit board by integrating multiple components into one, simplifying design and assembly

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in signal amplification

Maximum Power Dissipation (Abs): 26 W

Can handle high power levels without overheating, allowing for sustained operation in demanding conditions

Maximum Collector-Emitter Voltage: 80 V

Suitable for circuits requiring higher voltage levels, providing versatility in application usage

Maximum Collector Current (IC): 10 A

Capable of handling high current loads, making it suitable for power applications where large currents are involved

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6668 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6668 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-155-7134, 5961011557134

NIIN

011557134

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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